中国科学院机构知识库网格系统: 检索

Multifunctional upconverting nanoparticles for near-infrared triggered and synergistic antibacterial resistance therapy 期刊论文 OAI收割
chemical communications, 2014, 卷号: 50, 期号: 72, 页码: 10488-10490
Yin, Meili; Li, Zhenhua; Ju, Enguo; Wang,Zhenzhen; Dong,Kai; Ren,Jinsong; Qu,Xiaogang

收藏 | 浏览/下载：44/0 | 提交时间：2015/03/30

UP-CONVERSION NANOPARTICLES 980 NM LASER IN-VIVO PHOTODYNAMIC THERAPY SINGLET OXYGEN DRUG-DELIVERY BACTERIA PHOTOSENSITIZERS COMPLEX AGENTS

Influence of high temperature annealing in nitrogen on upconversion luminescence of -NaYF4: Yb3+, Er3+ hexagonal sub-microplates (EI CONFERENCE) 会议论文 OAI收割
2012 International conference on Function Materials and Nanotechnology, FMN 2012, May 19, 2012 - May 20, 2012, Zhengzhou, China
作者: Zhao J.

收藏 | 浏览/下载：25/0 | 提交时间：2013/03/25

The pure -NaYF4: Yb3+ Er3+ hexagonal sub-microplates were successfully prepared by the combination of coprecipitation and hydrothermal methods using sodium citrate as chelator. The size of them is about 600 nm 400 nm (side length thickness). The obtained sample was divided into two parts and one of them was annealed in nitrogen at 300 C for 2 hours. The crystal structure of the -NaYF4: Yb3+ Er3+ hexagonal sub-microplates before and after annealing treatment is hexagonal phase. Under the excitation of 980 nm diode laser the upconversion luminescence intensity the sample after annealing is much stronger than that of the sample without annealing treatment. High temperature annealing process improved the crystallization of the sample resulting in the decrease of the nonradiative relaxation and the enhancement of the upconversion luminescence. (2012) Trans Tech Publications Switzerland.

Energy transition between Yb3+-Tm3+-Gd3+ in Gd3+, Yb3+ and Tm3+ Co-doped fluoride nanocrystals (EI CONFERENCE) 会议论文 OAI收割
17th International Conference on Dynamical Processes in Excited States of Solids, DPC'10, June 20, 2010 - June 25, 2010, Argonne, IL, United states
作者:

收藏 | 浏览/下载：26/0 | 提交时间：2013/03/25

YF3: 20%Gd3+ 20%Yb3+ 0.5%Tm3+ nanocrystal has been synthesized by a hydrothermal method. The upconversion (UC) emission and energy transfer progresses between Gd3+-Yb 3+-Tm3+ under a 980-nm continuous wave semiconductor laser diode excitation have been explored. The experimental results show that the violet and ultraviolet (UV) enhancement with Tm3+ upconversion emission occurs in the nanocrystal and in the same time the UC emissions of Gd3+ from 6D9/2 6IJ 6P5/2 and 6P7/2 states to the ground state 8S7/2 are obtained too. The dynamic analysis implies that under 980-nm excitation the nanocrystal dimension plays a key role in the efficient energy transfer processes between Gd3+-Yb 3+-Tm3tt based on the energy matching conditions. 2011 Published by Elsevier B.V.

High power diode laser with beam coupling (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Wang L.; Liu Y.; Wang L.; Liu Y.; Liu Y.

收藏 | 浏览/下载：63/0 | 提交时间：2013/03/25

As the increasing applications of the semiconductor lasers in the laser processing the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper it mainly introduces the beam shaping and the technology of spatial coupling polarization coupling and wavelength coupling. The coupling key elements are presented and indicated. Finally the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.

Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W.

收藏 | 浏览/下载：38/0 | 提交时间：2013/03/25

Pulsed anodic oxidation technique a new way of forming current blocking layers was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.

High power diode pumped Vertical External-cavity Surface-emitting Lasers (VECSELS) (EI CONFERENCE) 会议论文 OAI收割
IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18, 2006 - September 22, 2006, Shanghai, China
作者: Qin L.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/25

We describe the theoretical analysis and calculations of the 980nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500mw in a single transverse mode. 2006 IEEE.

Energy upconversion in erbium doped oxyfluoride tellurite glass (EI CONFERENCE) 会议论文 OAI收割
ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China
作者: Chen B.; Xie Y.; Wang X.; Wang X.; Wang X.

收藏 | 浏览/下载：19/0 | 提交时间：2013/03/25

In this article we have investigated energy upconversion process in erbium doped oxyfuoride tellurite glasses exciated with 980 nm diode laser. The glasses used in measurements are with a mol% composition of 70TeO2-9PbF2-190AlF3-10BaF2-1Er2O3. The s intensity parameters the radiative rates the branching ratios and the fluorescence lifetimes were calculated based upon the Judd-Ofelt theory and the experimental absorption spectrum. Under 980 nm excitation efficient 530 544 and 665 nm upconversion emission are due to two-photon absorption processes.

Theoretical results of vertical external cavity surface emitting laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割
IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Sep 18 - 22 2006, Shanghai, China
作者: Qin L.

收藏 | 浏览/下载：16/0 | 提交时间：2013/03/25

We calculate the characteristic parameters of 980nm infrared vertical external cavity surface emitting laser with the KP method and give the result of the relative longitudinal confinement factor threshold gain and output power. 2006 IEEE.

980nm high power Vertical External-cavity Surface-emitting Semiconductor Lasers (VECSEL) (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者: Ning Y.-Q.; Wang L.-J.; Wang L.-J.; Qin L.

收藏 | 浏览/下载：16/0 | 提交时间：2013/03/25

We describe the design fabrication and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode.

High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y.

收藏 | 浏览/下载：26/0 | 提交时间：2013/03/25

We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.