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	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
	Superconducting gap anisotropy and quasiparticle interactions: A doping dependent photoemission study 期刊论文 OAI收割 PHYSICAL REVIEW LETTERS, 1999, 卷号: 83, 期号: 4, 页码: 840 Mesot, J; Norman, MR; Ding, H; Randeria, M; Campuzano, JC; Paramekanti, A; Fretwell, HM; Kaminski, A; Takeuchi, T; Yokoya, T; Sato, T; Takahashi, T; Mochiku, T; Kadowaki, K 收藏 \| 浏览/下载：34/0 \| 提交时间：2014/02/20 T-C SUPERCONDUCTORS A-B PLANE FERMI-SURFACE PENETRATION DEPTH ELECTRONIC-STRUCTURE BI2SR2CACU2O8+DELTA TEMPERATURE STATE IMPEDANCE PSEUDOGAP
	Low temperature superfluid response of high-T-c superconductors 期刊论文 OAI收割 INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1998, 卷号: 12, 期号: 10, 页码: 1007-1032 作者: Xiang, T; Panagopoulos, C; Cooper, JR; Xiang, T , Univ Cambridge, Interdisciplinary Res Ctr Superconduct, Madingley Rd, Cambridge CB3 0HE, England. \| 收藏 \| 浏览/下载：31/0 \| 提交时间：2012/08/29 Microwave Surface Impedance Anisotropic Penetration Depth A-b Plane Inplane Anisotropy Single-crystal Copper-oxide Yba2cu3o7-delta Dependence Susceptibility Yba2cu3o6.95
	Low temperature superfluid response of high-T-c superconductors 期刊论文 OAI收割 INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1998, 卷号: 12, 期号: 10, 页码: 1007 Xiang, T; Panagopoulos, C; Cooper, JR 收藏 \| 浏览/下载：18/0 \| 提交时间：2014/02/20 MICROWAVE SURFACE IMPEDANCE ANISOTROPIC PENETRATION DEPTH A-B PLANE INPLANE ANISOTROPY SINGLE-CRYSTAL COPPER-OXIDE YBA2CU3O7-DELTA DEPENDENCE SUSCEPTIBILITY YBA2CU3O6.95
	NONLINEAR TEMPERATURE-DEPENDENCE OF RESISTIVITY IN BI2SR2CUOY CRYSTALS 期刊论文 OAI收割 PHYSICAL REVIEW B, 1993, 卷号: 48, 期号: 18, 页码: 14005 WANG, NL; RUAN, KQ; YANG, LM; WANG, CY; CAO, LZ; CHEN, ZJ; WU, WB; ZHOU, GE; ZHANG, YH 收藏 \| 浏览/下载：20/0 \| 提交时间：2014/02/20 A-B PLANE TRANSPORT-PROPERTIES TRANSITION SUPERCONDUCTIVITY LA2-XSRXCUO4 ANISOTROPY