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• OAI收割 [22]
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浏览/检索结果: 共23条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Six Unprecedented Cytochalasin Derivatives from the Potato Endophytic Fungus Xylaria curta E10 and Their Cytotoxicity 期刊论文  OAI收割 PHARMACEUTICALS, 2023, 卷号: 16, 期号: 2, 页码: 193 作者:  Zhang,Xian;  Fan,Yinzhong;  Ye,Ke;  Pan,Xiaoyan;  Ma,Xujun   |  收藏  |  浏览/下载：13/0  |  提交时间：2024/05/09 endophyte fungus  Xylaria curta  cytochalasins  isolation and structure elucidation  cytotoxicity  A-D  METABOLITES   Near-infrared small molecule acceptors based on 4H-cyclopenta [1,2-b:5,4-b']dithiophene units for organic solar cells 期刊论文  OAI收割 DYES AND PIGMENTS, 2021, 卷号: 196, 页码: 6 作者:  Wang, Kaili;  Wei, Hongwei;  Li, Zhefeng;  Lu, Shirong   |  收藏  |  浏览/下载：42/0  |  提交时间：2021/11/26 Organic solar cell  Non-fullerene  Near-infrared  A-D-A structure  Easy synthesis  Posttreatment   Discovery of Natural Co-occurring Enantiomers of Monoterpenoid Indole Alkaloids 期刊论文  OAI收割 CHINESE JOURNAL OF CHEMISTRY, 2021, 卷号: 39, 期号: 4, 页码: 866-872 作者:  Yu,Yang;  Bao,Mei-Fen;  Cai,Xiang-Hai   |  收藏  |  浏览/下载：18/0  |  提交时间：2022/04/02 Monoterpenoid indole alkaloid  Enantiomers  Tabovines A—  D  Structure elucidation| Extraction and isolation   Simple near-Infrared Nonfullerene Acceptors Enable Organic Solar Cells with >9% Efficiency 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 7, 页码: 6717-6723 作者:  Wang, Kaili;  Lv, Jie;  Duan, Tainan;  Li, Zhefeng;  Yang, Qianguang   |  收藏  |  浏览/下载：52/0  |  提交时间：2019/03/25 organic solar cell  nonfullerene  near-infrared  A-D-A structure  easy synthesis  post-treatment   4,8-Bis(thienyl)-benzo[1,2-b:4,5-b ']dithiophene based A-pi-D-pi-A typed conjugated small molecules with mono-thiophene as the pi-bridge: Synthesis, properties and photovoltaic performance 期刊论文  OAI收割 DYES AND PIGMENTS, 2015, 卷号: 120, 页码: 8 作者:  Yin, N;  Wang, LL(王立磊);  Ma, YC(马玉超);  Lin, Y;  Wu, JC(武建昌) 收藏  |  浏览/下载：36/0  |  提交时间：2015/12/31 Organic solar cells  A-pi-D-pi-A type small molecules  Benzo[1,2-b:4,5-b ']dithiophene derivatives  Electron donor material  Optical and electrochemical properties  Structure-property-performance relationship   2,2-Dicyanovinyl-end-capped oligothiophenes as electron acceptor in solution processed bulk-heterojunction organic solar cells 期刊论文  OAI收割 ORGANIC ELECTRONICS, 2015, 卷号: 23, 页码: 11 作者:  Wu, J(武建昌);  Ma, Y(马玉超);  Wu, N(武娜);  Lin, Y;  Lin, J(林剑) 收藏  |  浏览/下载：40/0  |  提交时间：2015/12/31 Organic solar cells  A-pi-D-pi-A type oligothiophenes  Non-fullerene acceptor  "All-thiophene'' solar cell  Structure-property relationship   Solution-processable tetrazine and oligothiophene based linear A-D-A small molecules: Synthesis, hierarchical structure and photovoltaic properties 期刊论文  OAI收割 ORGANIC ELECTRONICS, 2013, 卷号: 14, 期号: 5, 页码: 1424-1434 作者:  Chen, LW(陈立桅) 收藏  |  浏览/下载：25/0  |  提交时间：2014/01/15 Oligothiophene  A-D-A small molecule  Crystallization  Hierarchical structure  Photovoltaic cell   Application of interferometry measurement in large-scale optic-electrical theodolite (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Sensors, Measurement and Intelligent Materials, ICSMIM 2012, December 26, 2012 - December 27, 2012, Guilin, China 作者:  Sun Z. 收藏  |  浏览/下载：46/0  |  提交时间：2013/03/25 Interferometry is a very important method in high accuracy measurement for optical system. This article briefly introduced the conception of interferometry and took a product of 4D Technology as an example to carry on the measurement. A large-scale optic-electrical Theodolite in assemblage was measured  and its primary mirror was 400mm in diameter. With the analysis of the results  some micro adjustments of the mechanical structure proceed  and it made the system perform better. The final results of the whole system is 1.061 in P-V value and 0.1136 in RMS value (=632.8nm)  this meets the demand of optical design and practical application. The result demonstrates that interferometry is a good way to be utilized and optimize in the procedure of assemble. (2013) Trans Tech Publications  Switzerland.   Structure and magnetic properties of (Al, Co) Co-doped ZnO thin films (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Materials Science and Nanotechnology, ICMSN 2012, November 16, 2012 - November 18, 2012, Guangzhou, China Cao P.; Bai Y. 收藏  |  浏览/下载：34/0  |  提交时间：2013/03/25 In this study  Zn0.99Co0.01Al0.015O thin film has been prepared by sol-gel method. The structural and magnetic properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Al codoping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01Al xO and Al3+ and Co2+ substitute for Zn 2+ without changing the wurtzite structure. The resistance measurements confirm that Al ions increase the free carriers concentration. Based on the above experiments we think the ferromagnetic behavior of the sample could not originate from Co nanoclusters. The presence of free carriers and localized d spins is a prerequisite for the appearance of ferromagnetism. As the result  the carriers generated by Al doping is considered a main factor to induce the ferromagnetic phenomenon. (2013) Trans Tech Publications  Switzerland.   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：44/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.