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• 长春光学精密机械与物... [7]
• 物理研究所 [3]
• 西安光学精密机械研究... [1]

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• OAI收割 [11]

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• 会议论文 [7]
• 期刊论文 [4]

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• 2013 [1]
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浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 3 W high-power laser passively mode-locked by graphene oxide saturable absorber 期刊论文  OAI收割 optics communications, 2013, 卷号: 298, 页码: 168-170 作者:  Feng, Chao;  Wang, Yonggang;  Liu, Jie;  Tsang, Yuen H.;  Song, Yanrong 收藏  |  浏览/下载：30/0  |  提交时间：2014/09/17 Graphene oxide  Absorber  Average output power  Mode locking  Ultrafast laser   Self-Q-Switched and Mode-Locked Cr,Nd:YAG Laser under Direct 885 nm Diode Laser Pumping 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 5 Jiang, M; Zhang, QL; Zhou, WJ; Zhang, J; Zhang, DX; Feng, BH 收藏  |  浏览/下载：22/0  |  提交时间：2013/09/24 AVERAGE OUTPUT POWER  ND-YAG  CR  EMISSION  LOCKING  GARNET  LEVEL  NDYAG LASER   A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang L.;  Wang L.;  Wang L.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m  150m and 100m-diameter  with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A  corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power  threshold current  lasing spectra  far-field distribution etc. 2008 SPIE.   High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang X.;  Wang L.;  Wang L.;  Wang L.;  Wang Y. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle  the average driving power in the laser chip is quite low  so the heating effect cemiconductor laser is very small  using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.   Numerical solution and experiment of a self-Q-switched 946 nm Cr,Nd:YAG laser 期刊论文  OAI收割 APPLIED PHYSICS B-LASERS AND OPTICS, 2008, 卷号: 93, 期号: 2-3, 页码: 421 Li, Q; Feng, B; Zhang, D; Du, S; Shi, Y; Zhang, Z; Zhang, S 收藏  |  浏览/下载：36/0  |  提交时间：2013/09/24 AVERAGE OUTPUT POWER  LONGITUDINAL-MODE OPERATION  ND-YAG LASER  SATURABLE ABSORBER  CR  ND-GDVO4 LASER  MICROCHIP LASER  NDYAG LASER  GREEN LASER  LOCKING  ND-YAG LASER   High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   Q-switched Er/Yb co-doped cladding pumped fiber laser (EI CONFERENCE) 会议论文  OAI收割 Passive Components and Fiber-based Devices IV, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Liu Y.;  Liu Y.;  Liu Y.;  Wang J. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 A compact all fiber Q-switched fiber laser based on an Er/Yb co-doped fiber (EYDF) is demonstrated. Two Bragg gratings (FBGl and FBG2) were employed as the cavity mirrors. The Average output power  single pulse energy and pulse width of the fiber laser at different pumping powers and different repetition rates was studied. The output spectrum of the fiber laser is 0.5 nm. At maximum launched pump power of 558mW  pulse energy of about 50J and duration of 140ns was obtained at the repetition of 2 kHz.   Diode-pumped passive Q-switched 946 nm Nd : YAG laser with a GaAs saturable absorber 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 3, 页码: 619 Wang, SM; Zhang, QL; Zhang, L; Zhang, CY; Zhang, DX; Feng, BH; Zhang, ZG 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/17 AVERAGE OUTPUT POWER  SOLID-STATE LASERS  MICROCHIP LASER  COUPLER   High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.   High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Sun Y.;  Wang L. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA  and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.