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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
金属研究所 [2]
理论物理研究所 [1]
长春光学精密机械与物... [1]
半导体研究所 [1]
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OAI收割 [5]
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期刊论文 [4]
会议论文 [1]
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2005 [1]
2002 [1]
1998 [1]
1997 [1]
1991 [1]
学科主题
Physics [1]
半导体材料 [1]
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Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China
作者:
Wang L.
;
Wang L.
;
Wang L.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/03/25
Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission
amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm
dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.
Progress of Si-based nanocrystalline luminescent materials
期刊论文
OAI收割
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC
;
Zhao XW
;
Fu GS
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  |  
浏览/下载:109/0
  |  
提交时间:2010/08/12
Si-based nanomaterials
fabricated method
structural characterization
light emitting mechanism
Si-based photoelectronic devices
CHEMICAL-VAPOR-DEPOSITION
SELF-ASSEMBLING FORMATION
SILICON QUANTUM DOTS
LASER-ABLATION
OPTICAL-ABSORPTION
POROUS SILICON
LIGHT-EMISSION
PHOTOLUMINESCENCE
FABRICATION
OXYGEN
Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films
期刊论文
OAI收割
Materials Research Bulletin, 1998, 卷号: 33, 期号: 12, 页码: 1857-1866
G. G. Qin
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浏览/下载:24/0
  |  
提交时间:2012/04/14
oxides
luminescence
defects
blue-light emission
visible luminescence
optical-properties
nanocrystals
mechanism
dependence
sio2-films
absorption
spectra
defects
Theory on the quantum confinement luminescence center model for nanocrystalline and porous Si
期刊论文
OAI收割
Journal of Applied Physics, 1997, 卷号: 82, 期号: 5, 页码: 2572-2579
G. Qin
;
G. G. Qin
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  |  
浏览/下载:22/0
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提交时间:2012/04/14
silicon films
light-emission
photoluminescence
mechanism
absorption
layers
nm
PION DOUBLE-CHARGE-EXCHANGE ON CALCIUM ISOTOPES
期刊论文
OAI收割
JOURNAL OF PHYSICS G-NUCLEAR AND PARTICLE PHYSICS, 1991, 卷号: 17, 期号: 8, 页码: 1203-1208
作者:
CHING, CR
;
HO, TH
;
ZOU, BS
;
CHING, CR , OCAST WORLD LAB,CTR THEORET PHYS,BEIJING,PEOPLES R CHINA.
  |  
收藏
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浏览/下载:20/0
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提交时间:2012/08/28
Absorption-emission Mechanism
Nuclear Shell-model
States