机构

• 长春光学精密机械与物... [1]
• 上海光学精密机械研究... [1]

采集方式

• OAI收割 [2]

内容类型

• 会议论文 [1]
• 期刊论文 [1]

发表日期

• 2007 [1]
• 2006 [1]

学科主题

筛选

浏览/检索结果: 共2条，第1-2条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Beam quality improvement of laser diode array by using off-axis external cavity 期刊论文  OAI收割 opt. express, 2007, 卷号: 15, 期号: 19, 页码: 11776, 11780 Su Zhouping; 楼祺洪; 董景星; 周军; 魏运荣 收藏  |  浏览/下载：1626/345  |  提交时间：2009/09/18 Laser diode arrays  Beam quality improvement  Circle aperture  Beam parameter product (BPP)   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.