机构

• 上海光学精密机械研究... [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [2]
• 会议论文 [1]

发表日期

• 2008 [2]
• 2005 [1]

学科主题

• 光存储 [1]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Laser pulse induced bumps in chalcogenide phase change films 期刊论文  OAI收割 j. appl. phys., 2008, 卷号: 103, 期号: 12, 页码: 124516 魏劲松; Jiao Xinbing; 干福熹n; Xiao Mufei 收藏  |  浏览/下载：1044/235  |  提交时间：2009/09/22 (e ,3e) process  American Institute of Physics (AIP)  Analytic solutions  beam sizes  chalcogenide  Data storage  Experimental observations  formation processes  Laser powering  Laser pulse durations  Laser writing  phase change films  Phase change thin films  Shape and size   宽光束进入展宽器提高输出脉冲对比度分析 期刊论文  OAI收割 光子学报, 2008, 卷号: 37, 期号: 5, 页码: 891, 895 杨庆伟; 郭爱林; 谢兴龙; 张福领; 高奇; 李美荣; 林尊琪 收藏  |  浏览/下载：1139/215  |  提交时间：2009/09/18 啁啾脉冲放大  Beam sizes  对比度  Chirped pulse amplification  脉冲展宽器  Chirped pulse amplifications  脉冲对比度  Chirped pulses  Contrast  Contrast ratio  Input pulses  Laser systems  Pulse contrast ratio  Pulse stretcher  Ray-tracing methods   Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：35/0  |  提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.