机构

• 长春光学精密机械与物... [2]

采集方式

• OAI收割 [2]

内容类型

• 会议论文 [2]

发表日期

• 2006 [1]
• 2005 [1]

学科主题

筛选

浏览/检索结果: 共2条，第1-2条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Study on the fabrication of orange micro-LED arrays for display (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Li J.;  Wang W.;  Wang W.;  Zhao L.;  Li J. 收藏  |  浏览/下载：32/0  |  提交时间：2013/03/25 Arrays of micro-sized LEDs which can be used as microdisplays have been demonstrated in recent years. In order to reduce the input and output connections to the arrays  we employ a matrix addressable architecture  in which all the pixels in each row are connected by a common metal line on the top of the window layer (top electrode) or at the base of substrate(bottom electrode). Decreasing the size of electrodes makes for minimizing the size of device. The optic and electric isolation and good ohmic contact are also helpful to obtain superior optical and electrical performance. We describe a procedure of fabrication of AlGalnP-based orange micro-LED by wet etching. The structure of devices is etched using both isotropic and anisotropic etchant. The pixel size is about 16um 20um  and there are 1000 818 pixels in the light emitting chip whose diagonal is 1-in.   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.