中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共7条，第1-7条

帮助

条数/页：排序方式：
	鄱阳湖流域多尺度碳、硅输送特征及其对浮游植物分布的影响期刊论文 OAI收割生态学报, 2020, 卷号: 40, 期号: 19, 页码: 7073 作者: 李兆喜; 高扬; 陆瑶; 贾珺杰; 王朔月 \| 收藏 \| 浏览/下载：9/0 \| 提交时间：2021/03/16 Poyang Lake watershed lakes that linking to the river phytoplankton C Si transport C/Si ratio 鄱阳湖流域通江湖泊浮游植物碳、硅输送碳硅比
	鄱阳湖流域多尺度碳、硅输送特征及其对浮游植物分布的影响期刊论文 OAI收割生态学报, 2020, 卷号: 40, 期号: 19, 页码: 7073 作者: 李兆喜; 高扬; 陆瑶; 贾珺杰; 王朔月 \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2021/03/16 Poyang Lake watershed lakes that linking to the river phytoplankton C Si transport C/Si ratio 鄱阳湖流域通江湖泊浮游植物碳、硅输送碳硅比
	The Influence of Alkali Treatment for Synthesizing Hierarchical Zeolite on Behavior of Cobalt Fischer-Tropsch Synthesis Catalysts 期刊论文 OAI收割 CATALYSIS SURVEYS FROM ASIA, 2017, 卷号: 21, 期号: 1, 页码: 28-36 作者: Wang, Yuelun; Cao, Xuewen; Jiang, Yuan; Zhang, Hong; Liang, Jing 收藏 \| 浏览/下载：28/0 \| 提交时间：2017/06/21 Hierarchical zeolites Si/Al ratio Cobalt catalyst C-iso/C-n ratio Fischer-Tropsch synthesis
	Liquid polycarbosilanes: synthesis and evaluation as precursors for SiC ceramic 期刊论文 OAI收割 POLYMER INTERNATIONAL, 2015, 卷号: 64, 期号: 8, 页码: 979-985 作者: He, Lijuan; Zhang, Zongbo; Yang, Xiaogan; Jiao, Lingling; Li, Yongming 收藏 \| 浏览/下载：28/0 \| 提交时间：2015/10/28 polycarbosilane SiC ceramic precursor C:Si ratio pyrolysis
	Manufacturing and testing of the line-array fiber-optic image slicer based on silicon V-grooves (EI CONFERENCE) 会议论文 OAI收割 MEMS/MOEMS Technologies and Applications III, November 12, 2007 - November 14, 2007, Beijing, China 作者: Zhu Y. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 Linear fiber-optic image slicer is used more and more in spatial exploration and imaging system. In this paper a plane arranging method of fiber-optic array based on Si-V grooves is established in order to improve the accuracy and reduce the cost of manufacturing. Firstly the Si-V groove array is micro-machined with anisotropic etching process then optical fibers are placed in the grooves orderly with plane arranging method. Secondly the end surfaces of the device are polished also the linear fiber-optic image slicer is packaged. Finally some parameters are tested including structure parameters transmittivity and vibration test. Experimental results indicate that the maximum error accumulated in 2000 periods of the Si-V grooves is 0.5 m the error of the height in Si-V grooves is less than 0.15m the roughness of the end surface is less than 0.9nm. The transmittivity of the linear fiber-optic image slicer that without optical film is 51.46% at the wavelength of 632.8nm. After random vibration experiment the ratio of the broken fiber increased by 0.1%. While the temperature reached 320C the stress of epoxy will be 130Mpa which is close to the limit resistance stress of 139Mpa some cracks appeared.
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.