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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共10条,第1-10条 帮助

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Photochemical origin of SiC2 in the circumstellar envelope of carbon-rich AGB stars revealed by ALMA 期刊论文  OAI收割
FRONTIERS IN ASTRONOMY AND SPACE SCIENCES, 2023, 卷号: 10, 页码: 11
作者:  
Feng, Yanan;  Li, Xiaohu;  Millar, Tom J.;  Szczerba, Ryszard;  Wang, Ke
  |  收藏  |  浏览/下载:32/0  |  提交时间:2023/11/14
Precipitation Behavior of W-Rich Phases in a High W-Containing Ni-Based Superalloys K416B 期刊论文  OAI收割
ACTA METALLURGICA SINICA, 2021, 卷号: 57, 期号: 2, 页码: 215-223
作者:  
Zhu Yuping;  Sheng Naicheng;  Xie Jun;  Wang Zhenjiang;  Xun Shuling
  |  收藏  |  浏览/下载:50/0  |  提交时间:2021/10/15
Extraordinary photodegradation performance of graphitic carbon nitride derived from tin foil-wrapped urea 期刊论文  OAI收割
JOURNAL OF NANOPARTICLE RESEARCH, 2021, 卷号: 23, 期号: 2, 页码: 14
作者:  
Gao, Ying;  Duan, Jizhou;  Zhai, Xiaofan;  Guan, Fang;  Wang, Xiutong
  |  收藏  |  浏览/下载:37/0  |  提交时间:2021/04/14
The anti-sintering catalysts: Fe-Co-Zr polymetallic fibers for CO2 hydrogenation to C-2 = -C-4 = -rich hydrocarbons 期刊论文  OAI收割
JOURNAL OF CO2 UTILIZATION, 2018, 卷号: 23, 页码: 219-225
作者:  
Li, Wenhui;  Zhang, Anfeng;  Jiang, Xiao;  Janik, Michael J.;  Qiu, Jieshan
  |  收藏  |  浏览/下载:151/0  |  提交时间:2019/06/20
Molecular Weight Dependency of Crystallization and Melting Behavior of beta-Nucleated Isotactic Polypropylene 期刊论文  OAI收割
journal of polymer science part b-polymer physics, 2014, 卷号: 52, 期号: 19, 页码: 1301-1308
Lu, Ying; Wang, Qiao; Men, Yongfeng
收藏  |  浏览/下载:37/0  |  提交时间:2015/10/19
Compounds of isotactic polypropylene (iPP) and beta-nucleating agent were used to investigate the relationship between the development of beta phase and molecular weight in iPP under quiescent crystallization conditions by using wide angle X-ray diffraction and differential scanning calorimetry techniques. In all cases  the dependency of the formation of beta phase in iPP on molecular weight of iPP at a defined crystallization temperature range was found. The iPP with high molecular weight possessed a wide range of crystallization temperature in inducing rich beta phase. However  poor or even no beta phase was obtained for the samples with low molecular weight in the same range. In addition  an upper critical crystallization temperature of producing dominant beta phase was found at 125 degrees C. Beyond this temperature  a phenomenon of prevailing alpha phase became obvious. (C) 2014 Wiley Periodicals  Inc.  
Purification and Analysis of A/U-rich RNA Binding Protein Using Immobilized RNA by EDC Crosslinking 期刊论文  OAI收割
PROGRESS IN BIOCHEMISTRY AND BIOPHYSICS, 2013, 卷号: 40, 期号: 4, 页码: 386-391
作者:  
Sun, DQ;  Wang, Y;  Liu, DG
收藏  |  浏览/下载:23/0  |  提交时间:2015/07/22
Cancer cell growth suppression by a 62nt AU-rich RNA from C/EBP beta 3 ' UTR through competitive binding with HuR 期刊论文  OAI收割
BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS, 2012, 卷号: 426, 期号: 1, 页码: 122-128
作者:  
Sun, DQ;  Wang, Y;  Liu, DG
收藏  |  浏览/下载:17/0  |  提交时间:2015/07/22
The properties of a large sample of OH/IR stars, S stars and C-rich AGB stars 期刊论文  OAI收割
ASTROPHYSICS AND SPACE SCIENCE, 2010, 卷号: 330, 期号: 1, 页码: 23-36
作者:  
Zhang, Hai-juan;  Zhou, Jian-jun;  Dong, Guo-liang;  Esimbek, Jarken;  Mu, Ji-mang
收藏  |  浏览/下载:19/0  |  提交时间:2015/08/25
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
Microstructure characterization of long W core SiC fiber 期刊论文  OAI收割
Journal of Materials Science & Technology, 2007, 卷号: 23, 期号: 5, 页码: 677-684
C. Y. Guo; C. B. Zhang; L. L. He; B. H. Jin; N. L. Shi
收藏  |  浏览/下载:28/0  |  提交时间:2012/04/13