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	X-ray diffraction studies of Sr3Cr2O8 and Ba3Cr2O8 at high pressures 期刊论文 OAI收割 Solid State Communications, 2014, 卷号: 200, 期号: 1, 页码: 5-8 Chaowen Xu; Shuangmeng Zhai; Lijin Ye; Xiang Wu; Ke Yang 收藏 \| 浏览/下载：20/0 \| 提交时间：2016/03/03 A. Sr3Cr2O8 and Ba3Cr2O8 C. X-ray diffraction D. Phase transition and Equation of state
	Molecular Weight Dependency of Crystallization and Melting Behavior of beta-Nucleated Isotactic Polypropylene 期刊论文 OAI收割 journal of polymer science part b-polymer physics, 2014, 卷号: 52, 期号: 19, 页码: 1301-1308 Lu, Ying; Wang, Qiao; Men, Yongfeng 收藏 \| 浏览/下载：36/0 \| 提交时间：2015/10/19 Compounds of isotactic polypropylene (iPP) and beta-nucleating agent were used to investigate the relationship between the development of beta phase and molecular weight in iPP under quiescent crystallization conditions by using wide angle X-ray diffraction and differential scanning calorimetry techniques. In all cases the dependency of the formation of beta phase in iPP on molecular weight of iPP at a defined crystallization temperature range was found. The iPP with high molecular weight possessed a wide range of crystallization temperature in inducing rich beta phase. However poor or even no beta phase was obtained for the samples with low molecular weight in the same range. In addition an upper critical crystallization temperature of producing dominant beta phase was found at 125 degrees C. Beyond this temperature a phenomenon of prevailing alpha phase became obvious. (C) 2014 Wiley Periodicals Inc.
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.