中国科学院机构知识库网格系统: 检索

Efficient and compact intracavity-frequency-doubled YVO4/Nd:YVO4/KTP laser through analysis of the interaction length 期刊论文 OAI收割
Optics Communications, 2010, 卷号: 283, 期号: 17, 页码: 3324-3327
F. J. Zhuang, Y. Q. Zheng, C. H. Huang, Y. Wei, H. Y. Zhu and G. Zhang

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CW lasers YVO4/Nd:YVO4 composite crystal Diode end pumping Second harmonic generation continuous-wave diode-laser 532 nm crystal nd

Efficient and compact intracavity-frequency-doubled YVO4/Nd:YVO4/KTP laser through analysis of the interaction length 期刊论文 OAI收割
Optics Communications, 2010, 卷号: 283, 期号: 17, 页码: 3324-3327
F. J. Zhuang, Y. Q. Zheng, C. H. Huang, Y. Wei, H. Y. Zhu and G. Zhang

收藏 | 浏览/下载：15/0 | 提交时间：2012/11/02

CW lasers YVO4/Nd:YVO4 composite crystal Diode end pumping Second harmonic generation continuous-wave diode-laser 532 nm crystal nd

Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文 OAI收割
Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China
作者: Qin L.

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By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current efficiency emission wavelength and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results it is shown that the device can still operate at high temperature condition.

Yb:YAG/YAG复合陶瓷薄片连续和调Q输出特性 期刊论文 OAI收割
Chin. Opt. Lett., 2008, 卷号: 6, 期号: 11, 页码: 852, 854
蔡虹; 周军; 赵宏明; 漆云凤; 楼祺洪; 董景星; 魏运荣

收藏 | 浏览/下载：1741/288 | 提交时间：2009/09/18

薄片激光器 Active mirrors 复合陶瓷 Ceramic lasers 调Q Composite ceramics CW operations Front faces Laser diodes Laser output powers Laser outputs Pulse widths Pumping wavelengths Repetition rates Thin disks Transmission outputs

Continuous-wave and passively mode-locked Yb : GYSO lasers pumped by diode lasers 期刊论文 OAI收割
ieee j. quantum electron., 2008, 卷号: 44, 期号: 5～6, 页码: 567, 572
Li Wenxue; Hao Qiang; Ding Liang'en; 赵广军; 郑丽和; 徐军; 曾和平

收藏 | 浏览/下载：719/159 | 提交时间：2009/09/24

continuous-wave (CW) lasers mode-locked lasers yttrium lasers

High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Changling Y.; Guoguang L.; Chunfeng H.; Li Q.

收藏 | 浏览/下载：18/0 | 提交时间：2013/03/25

High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology the devices have been fabricated in experiment and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.

High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者: Zhang Y.; Liu Y.; Liu Y.; Liu Y.; Qin L.

收藏 | 浏览/下载：31/0 | 提交时间：2013/03/25

High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal 期刊论文 OAI收割
ieee j. quantum electron., 2006, 卷号: 42, 期号: 5-6, 页码: 517, 521
Xue YH; Wang CY; Liu QW; Li YF; Chai L; 严成锋; 赵广军; 苏良碧; 徐晓东; Xu J

收藏 | 浏览/下载：1281/265 | 提交时间：2009/09/24

continuous-wave (CW) mode locking diode-pumped lasers Q-switched mode locking Yb : GSO crystal

High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y.

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Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.

High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y.

收藏 | 浏览/下载：23/0 | 提交时间：2013/03/25

We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.