机构

• 半导体研究所 [5]
• 长春光学精密机械与物... [2]
• 上海光学精密机械研究... [1]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [1]

内容类型

• 期刊论文 [7]
• 会议论文 [2]

发表日期

• 2016 [1]
• 2011 [1]
• 2010 [1]
• 2008 [3]
• 2007 [1]
• 2006 [1]
• 更多

学科主题

• 光电子学 [2]
• 半导体材料 [1]
• 半导体物理 [1]
• 激光技术;激光物理与... [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The influence of thermal and free carrier dispersion effects on all-optical wavelength conversion in a silicon racetrack-shaped microring resonator 期刊论文  OAI收割 laser physics, 2016, 卷号: 26, 期号: 7 作者:  Wang, Zhaolu;  Liu, Hongjun;  Sun, Qibing;  Huang, Nan;  Li, Shaopeng 收藏  |  浏览/下载：25/0  |  提交时间：2016/10/14 wavelength conversion  free carrier dispersion effect  thermal effect  silicon microring resonator   InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18504 Zuo YH; Cao QA; Zhang Y; Zhang LZ; Guo JC; Xue CL; Cheng BW; Wang QM 收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05 high responsivity  diluted waveguide  evanescent coupling  waveguide photodiode  TRAVELING-CARRIER PHOTODIODES  HIGH-POWER  1.55-MU-M WAVELENGTH  PERFORMANCE  PHOTODETECTORS  PHYSICS  DESIGN  LAYER   Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 074216 Zhang YX (Zhang Yun-Xiao); Liao ZY (Liao Zai-Yi); Zhao LJ (Zhao Ling-Juan); Pan JQ (Pan Jiao-Qing); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：264/39  |  提交时间：2010/08/17 electroabsorption modulator  intra-step quantum wells  uni-traveling-carrier RF-gain  WAVELENGTH CONVERSION  WAVE-GUIDE   Crosstalk analysis of a fiber laser sensor array system based on digital phase-generated carrier scheme 期刊论文  iSwitch采集 Journal of lightwave technology, 2008, 卷号: 26, 期号: 9-12, 页码: 1249-1255 作者:  Xiao, Hao;  Li, Fang;  Liu, Yuliang 收藏  |  浏览/下载：44/0  |  提交时间：2019/05/12 Crosstalk  Digital phase generated carrier  Fiber laser sensor (fls)  Isolation  Wavelength division multiplexing   X-shaped third harmonic generated by ultrashort infrared pulse filamentation in air 期刊论文  OAI收割 appl. phys. lett., 2008, 卷号: 92, 期号: 1, 页码: 11111 Xu Han; Xiong Hui; 李儒新; 程亚; 徐至展; Chin See Leang 收藏  |  浏览/下载：903/43  |  提交时间：2009/09/18 Angularly resolved spectra  Carrier wavelength  Conical ring emission   Crosstalk analysis of a fiber laser sensor array system based on digital phase-generated carrier scheme 期刊论文  OAI收割 journal of lightwave technology, 2008, 卷号: 26, 期号: 40068, 页码: 1249-1255 Xiao, H; Li, F; Liu, YL 收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08 crosstalk  digital phase generated carrier  fiber laser sensor (FLS)  isolation  wavelength division multiplexing   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.   Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures 期刊论文  OAI收割 journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79 Kong LM (Kong Lingmin); Cai JF (Cai Jiafa); Wu ZY (Wu Zhengyun); Gong Z (Gong Zheng); Fang ZD (Fang Zhidan); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：65/0  |  提交时间：2010/04/11 InGaAs layer  InAs quantum dots  time-resolved PL spectra  1.3 MU-M  CARRIER DYNAMICS  LASERS  GROWTH  WAVELENGTH  EMISSION  ISLANDS  LAYERS  SIZE   Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者:  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission  amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm  dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.