机构

• 新疆理化技术研究所 [3]
• 长春光学精密机械与物... [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2019 [1]
• 2017 [1]
• 2016 [1]
• 2015 [1]
• 2011 [1]

学科主题

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 X-ray detection based on complementary metal-oxide-semiconductor sensors 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2019, 卷号: 30 -   |  收藏  |  浏览/下载：8/0  |  提交时间：2020/10/26 X-ray detection  Simulated positioner  Complementary metal-oxide-semiconductor sensor  Effective pixel points   Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors 期刊论文  OAI收割 CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5 作者:  Ma, LD (Ma, Lindong);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong)   |  收藏  |  浏览/下载：44/0  |  提交时间：2018/01/08 Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor  Dark Current  Fixed-pattern Noise  Quantum Efficiency   Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 2 作者:  Wang, F (Wang Fan);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Zhang, XY (Zhang Xing-Yao) 收藏  |  浏览/下载：27/0  |  提交时间：2016/12/13 complementary metal oxide semiconductor image sensor  total ionizing dose radiation effect  pinned photodiode  full well chargecapacity   Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 193-199 作者:  Wang, B (Wang Bo);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Liu, CJ (Liu Chang-Ju);  Wen, L (Wen Lin)   |  收藏  |  浏览/下载：36/0  |  提交时间：2018/01/26 Complementary Metal Oxide Semiconductor Active Pixel Sensor  Dark Signal  Proton Radiation  Displacement Effect   Design and simulation of CMOS star sensor lens with large relative aperture and wide field (EI CONFERENCE) 会议论文  OAI收割 2011 International Conference on Electronic and Mechanical Engineering and Information Technology, EMEIT 2011, August 12, 2011 - August 14, 2011, Harbin, China Zhong X.; Jin G. 收藏  |  浏览/下载：60/0  |  提交时间：2013/03/25 A 50mm focal length  F/1.25  Gaussian type optical system is designed in this paper  which has 20field of view. Actual star image adding optical cross-talk effect of CMOS(Complementary Metal Oxide Semiconductor)  detector is simulated by non-sequential ray tracing in ZEMAX optical design and analysis software to evaluate its performance. The distortion relative to image spot centriod is introduced and calculated by simulated star images  which is less than 0.03% of lens in this paper. Thermal adaptability is discussed by opt-mechanic thermal analysis  which shows the RMS spot radius of marginal filed changes less than 0.7m under 10C temperature gradient  and changes less than 1m during homogeneous temperature changing from 40C to 40C. The results of analyses and simulations show the design of this lens can achieve the requirement of high precision CMOS star sensor well. 2011 IEEE.