中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共14条,第1-10条 帮助

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High-sensitivity methane monitoring based on quasi-fundamental mode matched continuous-wave cavity ring-down spectroscopy 期刊论文  OAI收割
CHINESE PHYSICS B, 2022, 卷号: 31
作者:  
Li, Zhe;  Yang, Shuang;  Zhang, Zhirong;  Xia, Hua;  Pang, Tao
  |  收藏  |  浏览/下载:58/0  |  提交时间:2022/12/22
Advances in G-stack diode laser using macro-channel water cooling and high thermal conductivity material packaging 会议论文  OAI收割
Virtual, Online, United states, 2021-03-06
作者:  
Han, Yang;  Sun, Lichen;  Fu, Tuanwei;  Gao, Lijun;  Zheng, Yanfang
  |  收藏  |  浏览/下载:74/0  |  提交时间:2021/06/28
Efficient continuous-wave and 739 fs mode-locked laser on a novel Nd3+, La3+ co-doped SrF2 disordered crystal 期刊论文  OAI收割
LASER PHYSICS LETTERS, 2016, 卷号: 13, 期号: 9
作者:  
Zhang, Feng;  Liu, Jingjing;  Liu, Jie;  Ma, Fengkai;  Jiang, Dapeng
收藏  |  浏览/下载:29/0  |  提交时间:2017/02/27
Electrically pumped organic laser device with a coupled microcavity structure (EI CONFERENCE) 会议论文  OAI收割
Organic Light Emitting Materials and Devices XVI, August 12, 2012 - August 15, 2012, San Diego, CA, United states
作者:  
Li Y.;  Li Y.;  Li Y.;  Li Y.;  Lin J.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
Diode-pumped Nd:GGG laser at 937 nm under direct pumping 期刊论文  OAI收割
LASER PHYSICS, 2011, 卷号: 21, 期号: 10, 页码: 1745
He, KN; Wei, ZY; Li, DH; Wang, Q; Zhang, ZG; Jiang, HH; Yin, ST; Zhang, QL
收藏  |  浏览/下载:17/0  |  提交时间:2013/09/17
Investigation on achieving the diode-pumped weak line laser at 1 3 mu m 期刊论文  OAI收割
Optics Communications, 2010, 卷号: 283, 期号: 24, 页码: 5153-5155
Y. Wei, G. Zhang, C. H. Huang, H. Y. Zhu, L. X. Huang and G. F. Wang
收藏  |  浏览/下载:17/0  |  提交时间:2012/11/02
532 nm continuous wave mode-locked nd:gdvo4 laser with sesam 期刊论文  iSwitch采集
Laser physics letters, 2009, 卷号: 6, 期号: 2, 页码: 113-116
作者:  
Li, L.;  Liu, J.;  Liu, M.;  Liu, S.;  Chen, E.
收藏  |  浏览/下载:55/0  |  提交时间:2019/05/12
532 nm continuous wave mode-locked Nd:GdVO4 laser with SESAM 期刊论文  OAI收割
laser physics letters, 2009, 卷号: 6, 期号: 2, 页码: 113-116
Li L; Liu J; Liu M; Liu S; Chen E; Wang W; Wang Y
收藏  |  浏览/下载:340/68  |  提交时间:2010/03/08
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:  
Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.  
Terahertz quantum cascade laser at 3.39 THz 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 3, 页码: 953-956
Cao, JC; Li, H; Han, YJ; Tan, ZY; Lu, JT; Luo, H; Laframboise, S; Liu, HC
收藏  |  浏览/下载:18/0  |  提交时间:2011/12/17
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