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CAS IR Grid
机构
长春光学精密机械与物... [2]
近代物理研究所 [2]
自动化研究所 [1]
生态环境研究中心 [1]
烟台海岸带研究所 [1]
采集方式
OAI收割 [7]
内容类型
会议论文 [4]
期刊论文 [3]
发表日期
2021 [1]
2019 [1]
2014 [2]
2010 [2]
2006 [1]
学科主题
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Augmentation of chloramphenicol degradation by Geobacter-based biocatalysis and electric field
期刊论文
OAI收割
JOURNAL OF HAZARDOUS MATERIALS, 2021, 卷号: 410, 页码: 8
作者:
Xiao, Leilei
;
Li, Jiajia
;
Lichtfouse, Eric
;
Li, Zhenkai
;
Wang, Quan
  |  
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2021/06/07
Chloramphenicol removal
Geobacter
Electric filed
Critical voltage
Synergistic operation
Dynamic Identification of Critical Nodes and Regions in Power Grid Based on Spatio-Temporal Attribute Fusion of Voltage Trajectory
期刊论文
OAI收割
ENERGIES, 2019, 卷号: 12, 期号: 5, 页码: 16
作者:
Bai, Xiwei
;
Liu, Daowei
;
Tan, Jie
;
Yang, Hongying
;
Zheng, Hengfeng
  |  
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2019/04/23
critical node
critical region
spatio-temporal attribute fusion
node voltage trajectory
Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices
会议论文
OAI收割
作者:
Su, Hong
;
Zhang, Zhangang
;
Lei, Zhifeng
;
En, Yunfei
;
Huang, Yun
  |  
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2018/08/20
single event upset
supply voltage
static random access memeory
critical charge
Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices
会议论文
OAI收割
作者:
Liu, Tianqi
;
Ji, CY
;
En, YF
;
Huang, Yun
;
En, Yunfei
  |  
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2018/08/20
single event upset
supply voltage
static random access memeory
critical charge
The effect of electrolyte constituents on contact glow discharge electrolysis
期刊论文
OAI收割
ELECTROCHIMICA ACTA, 2010, 卷号: 56, 期号: 2, 页码: 925-928
Jin, Xinglong
;
Wang, Xiaoyan
;
Yue, Junjie
;
Cai, Yaqi
;
Zhang, Hongyu
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2015/07/31
Contact glow discharge electrolysis
Electrolyte
Conductivity
Critical voltage
Hydrogen peroxide
Design of high-speed low-noise pre-amplifier for CCD camera (EI CONFERENCE)
会议论文
OAI收割
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, April 26, 2010 - April 29, 2010, Dalian, China
作者:
Zhang S.
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2013/03/25
Pre-amplifier circuit is critical for the noise performance of the high speed CCD camera. Its main functions are amplification and impedance transform. The high speed and low noise pre-amplifier of CCD camera is discussed and designed in this paper. The high speed and low noise operational amplifier OPA842 is adopted as the main part. The gain-set resistors for the amplifier are designed optimally. The different precision gain-set resistors are swept using Monte Carlo method. CCD video signal which has high DC offset voltage is AC coupled to the amplifier. The output signal of the amplifier is source terminated using 50 ohms matching resistor so as to transmit the video signal through coaxial cable. When the circuit works in high speed
the PCB will have important effect to circuit performance and can even cause the amplifier unstable due to the parasitic problem of PCB. So the parasitic model of the PCB is established and the PCB layout design issues are also presented. The design result shows that the pre-amplifier can be used in the camera whose pixel rate could be up to 40 MHz and its input referred noise density is about 3 nV/Hz 1/2. 2010 Copyright SPIE - The International Society for Optical Engineering.
Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE)
会议论文
OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Zhang Z.-W.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit
the luminous uniformity has great improved
but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED
such as low field effect mobility
low output current and threshold voltage shift. In this article
a two-a-Si:H TFT pixel circuit was designed
which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing
the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments
the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal
the variety of Vth
is smallest
about 1.28V after a fixed stressing time of 1.33104min
which shows the novel data signal timing can improved the driving TFT output-input current stability.