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Electron spin quantum beats and room temperature g factor in GaAsN 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4
Zhao, HM; Lombez, L; Liu, BL; Sun, BQ; Xue, QK; Chen, DM; Marie, X
收藏  |  浏览/下载:19/0  |  提交时间:2013/09/17
Influence of Polyelectrolyte on DNA-RecA Nucleoprotein Filaments: Poly-L-Lysine Used as a Model 期刊论文  OAI收割
chemphyschem, 2009, 卷号: 10, 期号: 9-10, 页码: 1624-1629
Guo CL; Li GP; Liu ZL; Sun LL; Sun YJ; Xu FG; Zhang Y; Yang T; Li ZA
收藏  |  浏览/下载:20/0  |  提交时间:2010/05/04
Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文  OAI收割
Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25
A set of ZnO/MgZnO heterostructures with well widths  Lw  varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton  while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness  the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.  
Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文  OAI收割
Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W.
收藏  |  浏览/下载:27/0  |  提交时间:2013/03/25
We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h  a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range  from 80 to 300 K  but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.  
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 期刊论文  OAI收割
thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192
Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC
收藏  |  浏览/下载:66/0  |  提交时间:2010/04/11
An analytical derivation of the locally enhanced sampling approximation 期刊论文  OAI收割
JOURNAL OF CHEMICAL PHYSICS, 1997, 卷号: 106, 期号: 3, 页码: 1191-1194
作者:  
Zheng, WM;  Zheng, Q;  Zheng, WM , ACAD SINICA,INST THEORET PHYS,POB 2735,BEIJING 100080,PEOPLES R CHINA.
  |  收藏  |  浏览/下载:23/0  |  提交时间:2012/08/29