中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:30/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
Transport properties of a bilayer two-dimensional electron gas under an in-plane magnetic field: Monte Carlo simulations 期刊论文  OAI收割
PHYSICAL REVIEW B, 2007, 卷号: 76, 期号: 4, 页码: 45306-45306
Guo, XG; Cao, JC
收藏  |  浏览/下载:27/0  |  提交时间:2011/12/17
Intersubband transition rates of localized electron-phonon interaction in structural defect superlattices 期刊论文  OAI收割
PHYSICS LETTERS A, 2005, 卷号: 334, 期号: 1, 页码: 55
Sang, HY; Gu, BY; Wang, XH; Chen, KQ
收藏  |  浏览/下载:18/0  |  提交时间:2013/09/18
Optical-phonon modes and electron-phonon interaction in arbitrary semiconductor planar microcavities 期刊论文  OAI收割
PHYSICAL REVIEW B, 1999, 卷号: 60, 期号: 23, 页码: 16031
Shi, JJ; Sanders, BC; Pan, SH; Goldys, EM
收藏  |  浏览/下载:26/0  |  提交时间:2013/09/24
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文  OAI收割
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
作者:  
Zhang JY;  Jiang DS
收藏  |  浏览/下载:29/0  |  提交时间:2010/11/15
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 期刊论文  OAI收割
journal of electronic materials, 1999, 卷号: 28, 期号: 5, 页码: 563-566
作者:  
Zhang JY;  Jiang DS
收藏  |  浏览/下载:58/0  |  提交时间:2010/08/12