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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共15条,第1-10条 帮助

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Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect 期刊论文  OAI收割
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2023, 卷号: 1049
作者:  
Yan, Xin;  Wang, Tao;  Wang, Gang;  Yao, Dong;  Liu, Yiheng
  |  收藏  |  浏览/下载:41/0  |  提交时间:2023/02/28
Study of spin-isospin responses of radioactive nuclei with the background-reduced neutron spectrometer, PANDORA 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 463, 页码: 189-194
作者:  
Stuhl, L.;  Sasano, M.;  Gao, J.;  Hirai, Y.;  Yako, K.
  |  收藏  |  浏览/下载:31/0  |  提交时间:2022/01/18
Development of Titanium-Based Transition-Edge Single-Photon Detector 期刊论文  OAI收割
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2019, 卷号: 29, 期号: 5, 页码: 5
作者:  
Zhang, Wen;  Geng, Yue;  Wang, Zheng;  Zhong, Jia-Qiang;  Li, Pei-Zhan
  |  收藏  |  浏览/下载:109/0  |  提交时间:2019/05/20
Extended effective carbon number concept in the quantitative analysis of multi-ethers using predicted response factors 期刊论文  OAI收割
Journal of Chromatography A, 2017, 卷号: 1513, 期号: 0, 页码: 194-200
作者:  
Chungu Xia(夏春谷);  Zhu GL(朱刚利);  Feng Zhao(赵峰);  Dan Wang(王丹)
  |  收藏  |  浏览/下载:36/0  |  提交时间:2018/11/16
DESIGN OF REDUCED SIZE LONG COUNTER WITH FLAT RESPONSE FUNCTION FROM FEW keV TO 20 MeV 期刊论文  OAI收割
NUCLEAR TECHNOLOGY & RADIATION PROTECTION, 2016, 卷号: 31, 期号: 4, 页码: 361-365
作者:  
Mazunga, Mohamed;  Ji, Xiang;  Li, Taosheng;  Li, Yanan
  |  收藏  |  浏览/下载:20/0  |  提交时间:2018/01/29
A highly sensitive and fast responsive semiconductor metal oxide detector based on In2O3 (n)anoparticle film for portable gas chromatograph 期刊论文  OAI收割
sensors and actuators b-chemical, 2015, 卷号: 216, 页码: 511-517
作者:  
Meng, Hu;  Yang, Wei;  Yan, Xiaohui;  Zhang, Yanggang;  Feng, Liang
收藏  |  浏览/下载:20/0  |  提交时间:2015/11/17
Study on response function model for γ-ray scintillation detector 期刊论文  OAI收割
ATOMIC ENERGY SCIENCE AND TECHNOLOGY, 2015, 卷号: 49, 期号: 8, 页码: 1354-1358
作者:  
Li Z(李哲);  Zhang YW(张译文);  Sun SF(孙世峰);  Wang BY(王宝义);  Wei L(魏龙)
收藏  |  浏览/下载:60/0  |  提交时间:2016/04/18
An improved histogram matching algorithm for the removal of striping noise in optical remote sensing imagery 期刊论文  OAI收割
OPTIK, 2015, 卷号: 126, 期号: 23, 页码: 15536-15560
作者:  
Cao, Biao;  Du, Yongming;  Xu, Daqi;  Li, Hua;  Liu, Qinhuo
收藏  |  浏览/下载:27/0  |  提交时间:2016/04/20
Corner detection using Gabor filters 期刊论文  OAI收割
iet image processing, 2014, 卷号: 8, 期号: 11, 页码: 639-646
作者:  
Zhang, Wei-Chuan;  Wang, Fu-Ping;  Zhu, Lei;  Zhou, Zuo-Feng
收藏  |  浏览/下载:51/0  |  提交时间:2015/03/19
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:31/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.