中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共8条,第1-8条 帮助

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Recent progress in device configuration and electrode fabrication for micro-supercapacitors 期刊论文  OAI收割
NEW CARBON MATERIALS, 2017, 卷号: 32, 期号: 6, 页码: 501-508
作者:  
Wang Sen;  Zheng Shuang-hao;  Huang Hai-bo;  Sun Cheng-lin;  Wu Zhong-shuai
  |  收藏  |  浏览/下载:35/0  |  提交时间:2019/06/20
The design and implementation of temperature acquisition system based on PXI (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Control Engineering and Communication Technology, ICCECT 2012, December 7, 2012 - December 9, 2012, Shenyang, Liaoning, China
作者:  
Wang J.
收藏  |  浏览/下载:35/0  |  提交时间:2013/03/25
Synthesis, characterization, and luminescent properties of a red-emitting Europium complex (EI CONFERENCE) 会议论文  OAI收割
1st International Conference on Energy and Environmental Protection, ICEEP 2012, June 23, 2012 - June 24, 2012, Hohhot, China
作者:  
Li B.;  Zhang L.;  Zhang L.;  Li B.;  Li B.
收藏  |  浏览/下载:85/0  |  提交时间:2013/03/25
a fluorine functionalized 1  10-phenanthroline ligand  3-ethyl-2-(2- fluorophenyl) imidazo[4  5-f]1  10-phenanthroline(EFPIP) and the corresponding red-emitting Eu(III) complex Eu(DBM)3(EFPIP) (DBM = dibenzoylmethanate) was synthesized and the photophysical properties and electroluminescent(EL) performances were researched. When Eu(DBM) 3(EFPIP) was used as emitting material in organic devices  the maximum efficiency and luminance of red emission achieved from the EL device with the configuration of ITO/m-MTDATA (30 nm)/NPB (20 nm)/x wt% Eu(DBM) 3(EFPIP) doped in CBP (30 nm)/Bphen (20 nm)/Alq3 (20 nm)/LiF (0.8 nm)/Al were 3.6 cd/A and 563 cd/m2  respectively. Compared with the previously reported devices based on methyl or chlorine substitute Eu(III) complexes  the EL performances of the device using Eu(DBM)3(EFPIP) as an emitter was significantly enhanced due to the introduction of fluorine. (2012) Trans Tech Publications  Switzerland.  
The design of analog video data grabber system based on TMS320VC33 and SAA7111A (EI CONFERENCE) 会议论文  OAI收割
2011 International Conference on Mechatronic Science, Electric Engineering and Computer, MEC 2011, August 19, 2011 - August 22, 2011, Jilin, China
作者:  
Liu S.-J.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
The Design of Fieldbus Device Management System Based on C/S Mode 会议论文  OAI收割
2011 3rd International Conference on Computer and Network Technology (ICCNT 2011), Taiyuan, China, February 26-28, 2011
作者:  
Zhou GP(周桂平);  Wang H(王宏)
收藏  |  浏览/下载:19/0  |  提交时间:2012/06/06
Configuration and adjustment of substrate preheating device 会议论文  OAI收割
2011 International Conference on Materials Engineering for Advanced Technologies, ICMEAT 2011, Singapore, May 5-6, 2011
作者:  
Zhang K(张凯);  Long RS(龙日升);  Liu WJ(刘伟军)
收藏  |  浏览/下载:28/0  |  提交时间:2017/03/13
Research into PCI express device's configuration space on PC platform (EI CONFERENCE) 会议论文  OAI收割
2010 International Conference on Computer, Mechatronics, Control and Electronic Engineering, CMCE 2010, August 24, 2010 - August 26, 2010, Changchun, China
作者:  
Xu S.-Y.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25
High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Zhang Y.;  Liu Y.;  Liu Y.;  Liu Y.;  Qin L.
收藏  |  浏览/下载:35/0  |  提交时间:2013/03/25
High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.