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CAS IR Grid
机构
长春光学精密机械与物... [5]
沈阳自动化研究所 [2]
大连化学物理研究所 [1]
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OAI收割 [8]
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会议论文 [7]
期刊论文 [1]
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2017 [1]
2012 [2]
2011 [3]
2010 [1]
2007 [1]
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Recent progress in device configuration and electrode fabrication for micro-supercapacitors
期刊论文
OAI收割
NEW CARBON MATERIALS, 2017, 卷号: 32, 期号: 6, 页码: 501-508
作者:
Wang Sen
;
Zheng Shuang-hao
;
Huang Hai-bo
;
Sun Cheng-lin
;
Wu Zhong-shuai
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2019/06/20
Micro-supercapacitors
Device Configuration
Electrode Fabrication
The design and implementation of temperature acquisition system based on PXI (EI CONFERENCE)
会议论文
OAI收割
2012 International Conference on Control Engineering and Communication Technology, ICCECT 2012, December 7, 2012 - December 9, 2012, Shenyang, Liaoning, China
作者:
Wang J.
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2013/03/25
This paper introduces the design of temperature acquisition system which is based on the PXI-6251 DAQ device
thermocouple acquisition module SCXI-1102 and the LabVIEW program language of NI. The design of temperature collection software and the configuration of hardware are described in details. The software developed in LabVIEW program language can acquire temperature data rapidly
what's more
the acquired data can be displayed real timely and saved to the disk. It is proved that the system is easy to practical use and can extraction mean square value and mean value after gathering the stable high-speed temperature. The function can be extended according to the demands of users. 2012 IEEE.
Synthesis, characterization, and luminescent properties of a red-emitting Europium complex (EI CONFERENCE)
会议论文
OAI收割
1st International Conference on Energy and Environmental Protection, ICEEP 2012, June 23, 2012 - June 24, 2012, Hohhot, China
作者:
Li B.
;
Zhang L.
;
Zhang L.
;
Li B.
;
Li B.
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2013/03/25
a fluorine functionalized 1
10-phenanthroline ligand
3-ethyl-2-(2- fluorophenyl) imidazo[4
5-f]1
10-phenanthroline(EFPIP) and the corresponding red-emitting Eu(III) complex Eu(DBM)3(EFPIP) (DBM = dibenzoylmethanate) was synthesized and the photophysical properties and electroluminescent(EL) performances were researched. When Eu(DBM) 3(EFPIP) was used as emitting material in organic devices
the maximum efficiency and luminance of red emission achieved from the EL device with the configuration of ITO/m-MTDATA (30 nm)/NPB (20 nm)/x wt% Eu(DBM) 3(EFPIP) doped in CBP (30 nm)/Bphen (20 nm)/Alq3 (20 nm)/LiF (0.8 nm)/Al were 3.6 cd/A and 563 cd/m2
respectively. Compared with the previously reported devices based on methyl or chlorine substitute Eu(III) complexes
the EL performances of the device using Eu(DBM)3(EFPIP) as an emitter was significantly enhanced due to the introduction of fluorine. (2012) Trans Tech Publications
Switzerland.
The design of analog video data grabber system based on TMS320VC33 and SAA7111A (EI CONFERENCE)
会议论文
OAI收割
2011 International Conference on Mechatronic Science, Electric Engineering and Computer, MEC 2011, August 19, 2011 - August 22, 2011, Jilin, China
作者:
Liu S.-J.
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/03/25
Analog video data grabber system based on TMS320VC33 and SAA7111A is proposed for a kind of automatic optical alignment measuring device. System uses the enhanced video processing chip SAA7111A to complete A/D conversion. The function of SAA7111A and the register configuration method of I2C Bus are introduced in the paper. System uses FPGA to control video data grabber and collaborative work of DSP. DSP processes video data. The paper gives design method of hardware and software. Experimental results indicate that the system can satisfy the requirements. 2011 IEEE.
The Design of Fieldbus Device Management System Based on C/S Mode
会议论文
OAI收割
2011 3rd International Conference on Computer and Network Technology (ICCNT 2011), Taiyuan, China, February 26-28, 2011
作者:
Zhou GP(周桂平)
;
Wang H(王宏)
收藏
  |  
浏览/下载:19/0
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提交时间:2012/06/06
DD
device management
fieldbus
configuration
Configuration and adjustment of substrate preheating device
会议论文
OAI收割
2011 International Conference on Materials Engineering for Advanced Technologies, ICMEAT 2011, Singapore, May 5-6, 2011
作者:
Zhang K(张凯)
;
Long RS(龙日升)
;
Liu WJ(刘伟军)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2017/03/13
Laser Metal Deposition Shaping (LMDS)
Rapid prototyping
Rapid manufacturing
Substrate Preheating Device
Configuration and Adjustment
Research into PCI express device's configuration space on PC platform (EI CONFERENCE)
会议论文
OAI收割
2010 International Conference on Computer, Mechatronics, Control and Electronic Engineering, CMCE 2010, August 24, 2010 - August 26, 2010, Changchun, China
作者:
Xu S.-Y.
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2013/03/25
When developing BIOS or device driver on PC Platform
it's necessary to access PCI configuration space and PCI Express extended configuration space. The register organization in PCI Express configuration space was detailed
PCI capability structure and PCI Express Extended Capability structures were emphasized here. A way of accessing device configuration space utilizing flat memory addressing was given
and its raw code was obtained on a Intel G31 chipset based PC. 2010 IEEE.
High power VCSEL device with periodic gain active region (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:
Zhang Y.
;
Liu Y.
;
Liu Y.
;
Liu Y.
;
Qin L.
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2013/03/25
High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation
lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure
a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure
with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.