机构

• 上海光学精密机械研究... [7]
• 宁波材料技术与工程研... [6]
• 物理研究所 [5]
• 合肥物质科学研究院 [4]
• 中国科学院大学 [3]
• 高能物理研究所 [2]
• 更多

采集方式

• OAI收割 [32]
• iSwitch采集 [3]

内容类型

• 期刊论文 [34]
• 会议论文 [1]

发表日期

• 2019 [6]
• 2017 [5]
• 2016 [2]
• 2014 [1]
• 2013 [2]
• 2012 [1]
• 更多

学科主题

• 光学薄膜 [6]
• 光存储 [1]
• 固体力学::制造工艺... [1]
• 材料科学与物理化学 [1]

筛选

浏览/检索结果: 共35条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Broadband microwave absorbing materials based on MWCNTs' electromagnetic wave filtering effect 期刊论文  OAI收割 COMPOSITES PART B-ENGINEERING, 2019, 卷号: 171, 页码: 214-221 作者:  Ling, An;  Tan, Guoguo   |  收藏  |   Broadband microwave absorbing materials based on MWCNTs' electromagnetic wave filtering effect 期刊论文  OAI收割 COMPOSITES PART B-ENGINEERING, 2019, 卷号: 171, 页码: 214-221 作者:     |  收藏  |   Broadband microwave absorbing materials based on MWCNTs' electromagnetic wave filtering effect 期刊论文  OAI收割 COMPOSITES PART B-ENGINEERING, 2019, 卷号: 171, 页码: 214-221 作者:  Ling, An;  Tan, Guoguo;  Man, Qikui;  Lou, Yaxin;  Chen, Shuwen   |  收藏  |   Broadband microwave absorbing materials based on MWCNTs' electromagnetic wave filtering effect 期刊论文  OAI收割 COMPOSITES PART B-ENGINEERING, 2019, 卷号: 171, 页码: 214-221 作者:     |  收藏  |   Broadband microwave absorbing materials based on MWCNTs' electromagnetic wave filtering effect 期刊论文  OAI收割 COMPOSITES PART B-ENGINEERING, 2019, 卷号: 171, 页码: 214-221 作者:  Ling, An;  Tan, Guoguo;  Man, Qikui;  Lou, Yaxin;  Chen, Shuwen   |  收藏  |   Broadband microwave absorbing materials based on MWCNTs' electromagnetic wave filtering effect 期刊论文  OAI收割 COMPOSITES PART B-ENGINEERING, 2019, 卷号: 171, 页码: 214-221 作者:  Ling, An;  Tan, Guoguo;  Man, Qikui;  Lou, Yaxin;  Chen, Shuwen   |  收藏  |   Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6 作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin 收藏  |   Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513 作者:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q. 收藏  |   Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer 期刊论文  OAI收割 Proceedings of SPIE - The International Society for Optical Engineering, 2017, 卷号: 10244, 页码: 102441W 作者:  Lei, Qiang;  Lei Q(雷强);  Gao, Yang;  Li, Jun-Ru;  Jia, Le   |  收藏  |   Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer 期刊论文  OAI收割 Proceedings of SPIE - The International Society for Optical Engineering, 2017, 卷号: 10244, 页码: 102441W 作者:  Gao, Yang;  Li, Jun-Ru   |  收藏  |