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	Structure, corrosion, and tribological properties of CrSiN coatings with various Si contents in 3.5% NaCl solution 期刊论文 OAI收割 SURFACE AND INTERFACE ANALYSIS, 2018, 卷号: 50, 期号: 4, 页码: 471-479 作者: Ye, Yuwei; Wang, Haixin; Wang, Yongxin \| 收藏 \| 浏览/下载：31/0 \| 提交时间：2018/12/04 Different Carbon Contents Crn Coatings Mechanical-properties Wear Properties Substrate Bias n Coatings Water Seawater Microstructure Temperature
	Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24 作者: Zhang, JX (Zhang Jin-Xin); He, CH (He Chao-Hui); Guo, HX (Guo Hong-Xia); Tang, D (Tang Du); Xiong, C (Xiong Cen) \| 收藏 \| 浏览/下载：17/0 \| 提交时间：2018/02/01 Sige Heterojunction Bipolar Transistor Different Bias Single Event Effect 3d Numerical Simulation
	Analysis of impact of gyroscope synthetical error on an electric-optical stabilized control system (EI CONFERENCE) 会议论文 OAI收割 3rd International Conference on BioMedical Engineering and Informatics, BMEI 2010, October 16, 2010 - October 18, 2010, Yantai, China 作者: Zhang X.; Zhang X.; Zhang X.; Jiang H. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 As one of the key components on a seeker EO stabilized platform on a missile gyroscope is directly relative to errors of servo systems. Main errors of gyro such as bias drift and scale factor nonlinearity are added to a servo system the result is analyzed to illuminated that how a gyro has effect on a seeker servo system. With the mathematical models of a gyro and a seeker the principle of choosing a gyro is theoretically deduced first and then two gyros model with different main parameters are added into the same gimbals model the errors of servo systems are compared to prove the deduction. Final conclusion is helpful for choosing proper gyros in a seeker servo system. 2010 IEEE.
	Assessment and inter-comparison of five high-resolution sea surface temperature products in the shelf and coastal seas around china 期刊论文 iSwitch采集 Continental shelf research, 2008, 卷号: 28, 期号: 10-11, 页码: 1286-1293 作者: Xie, Jiping; Zhu, Jiang; Li, Yan 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/05/10 Ghrsst Different spread Rmsd Coastal sea Bias correction
	Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.