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	Modification of source contribution in pals by simulation using geant4 code 期刊论文 iSwitch采集 Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2017, 卷号: 397, 页码: 75-81 作者: Ning, Xia; Cao, Xingzhong; Li, Chong; Li, Demin; Zhang, Peng 收藏 \| 浏览/下载：113/0 \| 提交时间：2019/04/23 Positron annihilation lifetime spectrum Geant4 simulation Kapton film Diffusion and reflection Source contribution
	Modification of source contribution in PALS by simulation using Geant4 code 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 397, 页码: 75-81 作者: Gong, YH; Wei, L; Wang, BY; Xia, R; Zhang, P \| 收藏 \| 浏览/下载：106/0 \| 提交时间：2019/08/27 Positron annihilation lifetime spectrum Geant4 simulation Kapton film Diffusion and reflection Source contribution
	Ion beam sputter deposition of zirconia thin films (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China 作者: Liu L.; Yang H.; Liu L. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 We determined the optical constants (the refractive index n and the extinction coefficient k) of ion beam sputter deposited zirconia thin films with spectroscopic ellipsometry (SE). First we obtained the structure information (the layer thickness surface roughness and layer diffusion) by fitting the grazing x-ray reflection (GXRR) spectra. The fitted surface roughness is verified by atomic force micrometer (AFM) measurement. Second based on the acquired structure information the measured ellipsometry spectra are fitted in the range of 240-800nm at an incident angle of 70.25 degree. The optical constants are solved based on the Tauc-Lorentz dispersion. The optical band gap extracted by SE is 4.79eV. Finally the optical band gap is verified by Taue plot method which is well consistent with that of SE.
	Optical characteristic of ion beam sputter deposited aluminum thin films (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China 作者: Yang H.; Liu L.; Liu L. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 Aluminum is a typical active metal very easy to oxidize. An oxide surface layer of about 2-6nm quickly formed in air which adds difficulty to the optical constants determination. An ex-situ method is used to determine the optical constants of aluminum thin films. First Second Third alumina (Al2O3) thin film is deposited by ion beam sputter deposition. The optical constants and thickness are determined by spectral ellipsoemtry (SE). The thickness is verified by grazing x-ray reflection (GXRR) fitting method Al thin film with an Al2O3 cap layer on top is deposited. This cap layer is of the same deposition condition with the first step. By fitting the GXRR spectra based on the acquired structure information the structure information (the thickness of the aluminum and the cap layer the ellipsometric spectra are fitted. The optical constants of the aluminum layer are extracted with the aid of the Drude model. Finally surface roughness and the diffusion between Al-Al2O 3) is obtained an induced transmission filter (ITF) is designed and deposited.