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Deposit structure and kinetic behavior of metal electrodeposition under enhanced gravity-induced convection 期刊论文  OAI收割
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2015, 卷号: 744, 页码: 25-31
作者:  
Wang, Mingyong;  Wang, Zhi;  Guo, Zhancheng
收藏  |  浏览/下载:26/0  |  提交时间:2015/06/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:34/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Ion beam sputter deposition of zirconia thin films (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China
作者:  
Liu L.;  Yang H.;  Liu L.
收藏  |  浏览/下载:21/0  |  提交时间:2013/03/25
We determined the optical constants (the refractive index n and the extinction coefficient k) of ion beam sputter deposited zirconia thin films with spectroscopic ellipsometry (SE). First  we obtained the structure information (the layer thickness  surface roughness and layer diffusion) by fitting the grazing x-ray reflection (GXRR) spectra. The fitted surface roughness is verified by atomic force micrometer (AFM) measurement. Second  based on the acquired structure information  the measured ellipsometry spectra are fitted in the range of 240-800nm at an incident angle of 70.25 degree. The optical constants are solved based on the Tauc-Lorentz dispersion. The optical band gap extracted by SE is 4.79eV. Finally  the optical band gap is verified by Taue plot method  which is well consistent with that of SE.  
Optical characteristic of ion beam sputter deposited aluminum thin films (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China
作者:  
Yang H.;  Liu L.;  Liu L.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25
Aluminum is a typical active metal very easy to oxidize. An oxide surface layer of about 2-6nm quickly formed in air which adds difficulty to the optical constants determination. An ex-situ method is used to determine the optical constants of aluminum thin films. First  Second  Third  alumina (Al2O3) thin film is deposited by ion beam sputter deposition. The optical constants and thickness are determined by spectral ellipsoemtry (SE). The thickness is verified by grazing x-ray reflection (GXRR) fitting method  Al thin film with an Al2O3 cap layer on top is deposited. This cap layer is of the same deposition condition with the first step. By fitting the GXRR spectra  based on the acquired structure information  the structure information (the thickness of the aluminum and the cap layer  the ellipsometric spectra are fitted. The optical constants of the aluminum layer are extracted with the aid of the Drude model. Finally  surface roughness and the diffusion between Al-Al2O 3) is obtained  an induced transmission filter (ITF) is designed and deposited.  
Performance of an anode-supported SOFC with anode functional layers 期刊论文  OAI收割
Electrochimica Acta, 2008, 卷号: 53, 期号: 27, 页码: 7825-7830
K. F. Chen; X. J. Chen; Z. Lu; N. Ai; X. Q. Huang; W. H. Su
收藏  |  浏览/下载:17/0  |  提交时间:2012/04/13