中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共10条,第1-10条 帮助

条数/页: 排序方式:
Enhanced electron current in inverted organic light emitting diodes with an n-doped electron transport layer adopting high and low doping levels 期刊论文  OAI收割
MATERIALS RESEARCH EXPRESS, 2018, 卷号: 5, 期号: 1
作者:  
Qin, Dashan;  Shi, Zhihua;  Cao, Huan;  Zhao, Wei;  Zhang, Jidong
  |  收藏  |  浏览/下载:26/0  |  提交时间:2019/04/09
Effects of side groups on the kinetics of charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes 期刊论文  OAI收割
journal of materials chemistry c, 2015, 卷号: 3, 期号: 1, 页码: 46-50
作者:  
Shi,Shengwei;  Gao,Feng;  Sun,Zhengyi;  Zhan,Yiqiang;  Fahlman,Mats
收藏  |  浏览/下载:44/0  |  提交时间:2016/05/12
Recent Advances in Solution-Processed White Organic Light-Emitting Materials and Devices 期刊论文  OAI收割
israel journal of chemistry, 2014, 卷号: 54, 期号: 7, 页码: 897-917
Zhang, Baohua; Liu, Lihui; Xie, Zhiyuan
收藏  |  浏览/下载:55/0  |  提交时间:2015/10/21
High-Efficiency Single Emissive Layer White Organic Light-Emitting Diodes Based on Solution-Processed Dendritic Host and New Orange-Emitting Iridium Complex 期刊论文  OAI收割
advanced materials, 2012, 卷号: 24, 期号: 14, 页码: 1873-1877
Zhang BH; Tan GP; Lam CS; Yao B; Ho CL; Liu LH; Xie ZY; Wong WY; Ding JQ; Wang LX
收藏  |  浏览/下载:21/0  |  提交时间:2013/05/22
Solution-processable small molecules as efficient universal bipolar host for blue, green and red phosphorescent inverted OLEDs 期刊论文  OAI收割
journal of materials chemistry, 2012, 卷号: 22, 期号: 11, 页码: 5164-5170
Chen JS; Shi CS; Fu Q; Zhao FC; Hu Y; Feng YL; Ma DG
收藏  |  浏览/下载:20/0  |  提交时间:2013/06/30
Effect of Ca and buffer layers on the performance of organic light-emitting diodes based on tris-(8-hydroxyquinoline) aluminum 期刊论文  OAI收割
THIN SOLID FILMS, 2010, 卷号: 518, 期号: 17, 页码: 4874-4878
作者:  
Shi, Shengwei;  Ma, Dongge
  |  收藏  |  浏览/下载:16/0  |  提交时间:2019/04/09
Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes 期刊论文  OAI收割
materials science and engineering b-advanced functional solid-state materials, 2010, 卷号: 175, 期号: 1, 页码: 75-80
Ye TL; Chen ZY; Chen JS; Ma DG
收藏  |  浏览/下载:20/0  |  提交时间:2012/04/25
The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes 期刊论文  OAI收割
organic electronics, 2008, 卷号: 9, 期号: 6, 页码: 985-993
Wang FX; Qiao XF; Xiong T; Ma DG
收藏  |  浏览/下载:213/45  |  提交时间:2010/04/14
NaCl/Ca/Al as an efficient cathode in organic light-emitting devices 期刊论文  OAI收割
applied surface science, 2006, 卷号: 252, 期号: 18, 页码: 6337-6341
Shi SW; Ma DG
收藏  |  浏览/下载:16/0  |  提交时间:2010/08/17
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25
In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.