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CAS IR Grid
机构
长春应用化学研究所 [7]
化学研究所 [2]
长春光学精密机械与物... [1]
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OAI收割 [10]
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期刊论文 [9]
会议论文 [1]
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2018 [1]
2015 [1]
2014 [1]
2012 [2]
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2008 [1]
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Enhanced electron current in inverted organic light emitting diodes with an n-doped electron transport layer adopting high and low doping levels
期刊论文
OAI收割
MATERIALS RESEARCH EXPRESS, 2018, 卷号: 5, 期号: 1
作者:
Qin, Dashan
;
Shi, Zhihua
;
Cao, Huan
;
Zhao, Wei
;
Zhang, Jidong
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/04/09
Organic Light Emitting Diodes
N-doped Electron Transport Layer
Doping Level
Electron Tunneling Injection
Effects of side groups on the kinetics of charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes
期刊论文
OAI收割
journal of materials chemistry c, 2015, 卷号: 3, 期号: 1, 页码: 46-50
作者:
Shi,Shengwei
;
Gao,Feng
;
Sun,Zhengyi
;
Zhan,Yiqiang
;
Fahlman,Mats
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2016/05/12
TRANSIENT ELECTROLUMINESCENCE
ELECTRON-MOBILITY
HOLE TRANSPORT
SOLAR-CELLS
DEVICES
INJECTION
EFFICIENCY
POLYMER
LAYER
ELECTROPHOSPHORESCENCE
Recent Advances in Solution-Processed White Organic Light-Emitting Materials and Devices
期刊论文
OAI收割
israel journal of chemistry, 2014, 卷号: 54, 期号: 7, 页码: 897-917
Zhang, Baohua
;
Liu, Lihui
;
Xie, Zhiyuan
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2015/10/21
CONJUGATED-POLYMER BLENDS
HIGHLY EFFICIENT BLUE
PHOSPHORESCENT PLATINUM(II) COMPLEXES
ACTIVATED DELAYED FLUORESCENCE
EXTERNAL QUANTUM EFFICIENCY
HOLE-TRANSPORTING MATERIALS
ELECTRON-INJECTION LAYER
ETHER PHOSPHINE OXIDE)
ELECTROPHOSPHORESCENT DEVICES
ELECTROLUMINESCENT DEVICES
High-Efficiency Single Emissive Layer White Organic Light-Emitting Diodes Based on Solution-Processed Dendritic Host and New Orange-Emitting Iridium Complex
期刊论文
OAI收割
advanced materials, 2012, 卷号: 24, 期号: 14, 页码: 1873-1877
Zhang BH
;
Tan GP
;
Lam CS
;
Yao B
;
Ho CL
;
Liu LH
;
Xie ZY
;
Wong WY
;
Ding JQ
;
Wang LX
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/05/22
ELECTRON-INJECTION LAYER
ENERGY-TRANSFER
ELECTROPHOSPHORESCENT DEVICES
QUANTUM EFFICIENCY
POLYMER
PERFORMANCE
PHOSPHOR
POLY(N-VINYLCARBAZOLE)
CARRIER
OLEDS
Solution-processable small molecules as efficient universal bipolar host for blue, green and red phosphorescent inverted OLEDs
期刊论文
OAI收割
journal of materials chemistry, 2012, 卷号: 22, 期号: 11, 页码: 5164-5170
Chen JS
;
Shi CS
;
Fu Q
;
Zhao FC
;
Hu Y
;
Feng YL
;
Ma DG
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2013/06/30
LIGHT-EMITTING-DIODES
ELECTRON-INJECTION LAYER
ORGANIC ELECTROLUMINESCENT DEVICES
STABLE METAL-OXIDES
PERFORMANCE
IMPROVEMENT
FABRICATION
EMISSION
DISPLAYS
MOBILITY
Effect of Ca and buffer layers on the performance of organic light-emitting diodes based on tris-(8-hydroxyquinoline) aluminum
期刊论文
OAI收割
THIN SOLID FILMS, 2010, 卷号: 518, 期号: 17, 页码: 4874-4878
作者:
Shi, Shengwei
;
Ma, Dongge
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/04/09
Organic Light-emitting Diodes
Buffer Layer
Electron Injection
Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes
期刊论文
OAI收割
materials science and engineering b-advanced functional solid-state materials, 2010, 卷号: 175, 期号: 1, 页码: 75-80
Ye TL
;
Chen ZY
;
Chen JS
;
Ma DG
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/04/25
CARRIER TRANSPORT
HOLE INJECTION
SINGLE-LAYER
TRANSIENT ELECTROLUMINESCENCE
TEMPERATURE-DEPENDENCE
HIGH-EFFICIENCY
POLYFLUORENE
DEVICES
ELECTRON
SEMICONDUCTORS
The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes
期刊论文
OAI收割
organic electronics, 2008, 卷号: 9, 期号: 6, 页码: 985-993
Wang FX
;
Qiao XF
;
Xiong T
;
Ma DG
收藏
  |  
浏览/下载:213/45
  |  
提交时间:2010/04/14
CHARGE INJECTION EFFICIENCY
ELECTROLUMINESCENT DEVICES
ENHANCED PERFORMANCE
ELECTRON INJECTION
WORK-FUNCTION
METAL-OXIDES
LAYER
SURFACE
FILMS
NaCl/Ca/Al as an efficient cathode in organic light-emitting devices
期刊论文
OAI收割
applied surface science, 2006, 卷号: 252, 期号: 18, 页码: 6337-6341
Shi SW
;
Ma DG
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/08/17
ENHANCED ELECTRON INJECTION
INDIUM-TIN-OXIDE
ELECTROLUMINESCENT DEVICES
CSF/YB/AG CATHODES
ANODE MODIFICATION
CHARGE INJECTION
AL/LIF ELECTRODE
LIF/AL CATHODES
BUFFER-LAYER
LINE-UP
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE)
会议论文
OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.
;
Wu C. X.
;
Wei Z. P.
;
Zhang Z. Z.
;
Zhao D. X.
;
Zhang J. Y.
;
Liu Y. C.
;
Shen D. Z.
;
Fan X. W.
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2013/03/25
In this paper
Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)
Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers
respectively. In PL spectra
two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature
and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases
the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm
only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.