中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共3条，第1-3条

帮助

条数/页：排序方式：
	Dependence of the stability of organic light-emitting diodes on driving mode 期刊论文 OAI收割 chinese science bulletin, 2011, 卷号: 56, 期号: 21, 页码: 2210-2214 作者: Zhang WenWen; Wu ZhaoXin; Zhang XinWen; Liang ShiXiong; Jiao Bo 收藏 \| 浏览/下载：23/0 \| 提交时间：2012/06/29 organic light-emitting diodes stability driving mode electrons holes
	Influence of driving mode on the operation stability of organic light-emitting diodes 期刊论文 OAI收割 optoelectronics and advanced materials-rapid communications, 2010, 卷号: 4, 期号: 9, 页码: 1379-1383 作者: Zhang, W.; Wu, Z.; Zhang, X.; Liang, S.; Jiao, B. 收藏 \| 浏览/下载：22/0 \| 提交时间：2015/04/22 OLED Stability Driving mode Electrons/holes
	Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文 OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.