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Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L.
收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.  
虚拟鼻腔镜手术仿真系统 学位论文  OAI收割
工学硕士, 中国科学院自动化研究所: 中国科学院研究生院, 2004
谭珂
收藏  |  浏览/下载：37/0  |  提交时间：2015/09/02