机构

• 苏州纳米技术与纳米仿... [1]
• 长春光学精密机械与物... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [2]
• 会议论文 [1]

发表日期

• 2010 [2]
• 2005 [1]

学科主题

• 光电子学 [1]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文  OAI收割 Solar Energy, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891 作者:  Lu SL (陆书龙);  Wang RX (王荣新);  Yang H (杨辉);  Zhou TF (周桃飞);  Dong JR (董建荣) 收藏  |  浏览/下载：31/0  |  提交时间：2010/12/31 Internal quantum efficiency  Surface recombination  Genetic algorithm  Full spectra   Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文  OAI收割 solar energy, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891 Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Zhou TF (Zhou Taofei); Jiang DS (Jiang Desheng); Wang RX (Wang Rongxin); Qiu K (Qiu Kai); Dong JR (Dong Jianrong); Yang H (Yang Hui) 收藏  |  浏览/下载：40/0  |  提交时间：2010/11/27 Internal quantum efficiency  Surface recombination  Genetic algorithm  Full spectra   Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：41/0  |  提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.