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浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High acetone sensitive and reversible P- to N-type switching NO2 sensing properties of Pt@Ga-ZnO core-shell nanoparticles 期刊论文  OAI收割 SENSORS AND ACTUATORS B-CHEMICAL, 2019, 卷号: 289, 页码: 114-123 作者:  Gong, Yan;  Wu, Xiaofeng;  Zhou, Xinyuan;  Li, Xiaofei;  Han, Ning   |  收藏  |  浏览/下载：68/0  |  提交时间：2019/06/14 Ga doping  Core-shell nanoparticles  Acetone sensing  NO2 sensing  p-n Sensing transition   Composition and Band Gap Tailoring of Crystalline (GaN)(1-x),(ZnO)(x) Solid Solution Nanowires for Enhanced Photoelectrochemical Performance 期刊论文  OAI收割 INORGANIC CHEMISTRY, 2018, 卷号: 57, 期号: 9, 页码: 5240-5248 作者:  Li, J;  Liu, BD;  Wu, AM;  Yang, B;  Yang, WJ   |  收藏  |  浏览/下载：33/0  |  提交时间：2018/06/05 Visible-light-driven  Photocatalytic Activity  (Ga1-xznx)(N1-xox) Nanocrystals  Semiconductor Nanowires  Energy-conversion  Water  Electrode  Heterostructures  Absorption  Efficiency   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：34/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   一种缓释型青霉素阴离子插层水滑石材料及其制备和应用 专利  OAI收割 专利类型: 发明, 专利号: CN201110290535.3, 申请日期: 2012-06-20, 公开日期: 2012-06-20 作者:  王毅 收藏  |  浏览/下载：46/0  |  提交时间：2014/08/04 一种缓释型青霉素阴离子插层水滑石材料  M3+为Al3+  M2+/M3+的摩尔比为1.6～4.5  0.2≤x≤0.4。  其特征在于：所述水滑石材料化学组成通式为[M2+1?xM3+x(OH)2]x+(C16H17N2O4S?)x·nH2O  Cr3+  M2+为Mg2+  Fe3+  Zn2+  V3+  Ni2+  Co3+  Fe2+或Mn2+的二价金属离子  Ga3+或Ti3+的三价金属离子   Synthesis and Characterization of Nanocrystalline GaN by Ammonothermal Method Using CsNH2 as Mineralizer 期刊论文  OAI收割 Journal of Nanoscience and Nanotechnology, 2010, 卷号: 10, 期号: 9, 页码: 5741-5745 W. W. Lin, J. Huang, D. G. Chen, Z. Lin, W. Li, J. K. Huang and F. Huang 收藏  |  浏览/下载：15/0  |  提交时间：2012/11/02 Ammonothermal  GaN  Mineralizer  Nanocrystals  CsNH2  gallium nitride  doped gan  crystal-growth  quantum dots  temperature  route  (ga(nh)(3/2))(n)  ferromagnetism  nanoparticles  conversion   Stable photocatalytic hydrogen evolution from water over ZnO-CdS core-shell nanorods 期刊论文  OAI收割 International Journal of Hydrogen Energy, 2010, 卷号: 35, 期号: 15, 页码: 8199-8205 X. W. Wang; G. Liu; G. Q. Lu; H. M. Cheng 收藏  |  浏览/下载：36/0  |  提交时间：2012/04/13 Water splitting  Photocatalysis  ZnO-CdS  Z-scheme  Core-shell  visible-light irradiation  shuttle redox mediator  solid-solution  h-2  evolution  z-scheme  surface nanostructure  ruthenium oxide  cocatalyst  taon  (ga1-xznx)(n1-xox)   Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films 期刊论文  OAI收割 THIN SOLID FILMS, 2010, 卷号: 518, 期号: 19, 页码: 5542-5545 作者:  Yang TY(杨铁莹);  Qin XB(秦秀波);  Wang HH(王焕华);  Jia QJ(贾全杰);  Yu RS(于润升) 收藏  |  浏览/下载：21/0  |  提交时间：2016/06/29 p-Type transparent conducting oxide  Ga-doped SnO2  Thin films  p-n homojunction diode  Magnetron sputtering  X-ray diffraction  X-ray photoelectron spectroscopy   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：92/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   准一维Ga(N,P)纳米半导体材料的制备与表征 学位论文  OAI收割 硕士, 金属研究所: 中国科学院金属研究所, 2009 付鲁堂 收藏  |  浏览/下载：58/0  |  提交时间：2012/04/10 准一维纳米结构  Ga(N  P)半导体  制备  性能   The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 1, 页码: 91-93 Sun LL; Yan FW; Wang JX; Zeng YP; Wang GH; Li JM 收藏  |  浏览/下载：235/46  |  提交时间：2010/03/08 ROOM-TEMPERATURE  THIN-FILMS  (GA  MN)N