机构

• 长春光学精密机械与物... [2]
• 上海微系统与信息技术... [2]
• 上海光学精密机械研究... [2]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [4]
• 会议论文 [2]

发表日期

• 2008 [2]
• 2007 [2]
• 2006 [2]

学科主题

• 光学材料;光学玻璃 [2]
• Biochemica... [1]
• Nanoscienc... [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 SiO2 对Bi2O3-B2O3 玻璃体系光学、热学及结构的影响 期刊论文  OAI收割 光子学报, 2008, 卷号: 37, 期号: s1, 页码: 49, 52 高国军; 汪国年; 胡丽丽 收藏  |  浏览/下载：1292/239  |  提交时间：2009/09/24 Binary glass  Bismuth glasses  Glass samples  Melt-quench  Mid-Infrared  Optical performance  Phase seperation  Raman spectra  Short-wave bands  Structural characteristics  Tetrahedral groups  Thermal stabilities  Third-order nonlinearity  Transmittance spectra  Uv cutoffs  Vibrational modes  Visible transmittances  Wave bands  XRD   980 nm 抽运下Yb-Tm-Ho 三掺氟磷酸盐玻璃的2 μm 荧光性质 期刊论文  OAI收割 光子学报, 2008, 卷号: 37, 期号: s1, 页码: 5 王孟; 衣丽霞; 张丽艳; 汪国年; 胡丽丽; 张军杰 收藏  |  浏览/下载：1134/173  |  提交时间：2009/09/24 Characteristic temperatures  Doped fluorophosphate glass  Fluorescence intensities  Fluorescence properties  Fluorescence spectrum  Fluoride glass  Fluorophosphate glasses  Glass hosts  Glass samples  Glass systems  Judd-Ofelt parameters  Pumping schemes  Spectroscopic parameters  Spontaneous transition probabilities  Thermal stabilities  Transfer mechanisms  Yb-Tm-Ho triply-doped   The study of ZnO film growth and the fabrication of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 The ZnO films were deposited on the substrate of glass by MOCVD [1-3]. The X-ray diffraction patterns of samples show sharp diffraction peaks ZnO (002) indicating the films were highly c-axis oriented. The devices based on the ZnO film were fabricated.   A sandwich-injection method for microchip electrophoresis 期刊论文  OAI收割 NANO, 2007, 卷号: 2, 期号: 6, 页码: 373-381 Li, G; Zhuang, GS; Zhou, HB; Zhao, JL; Xu, YS 收藏  |  浏览/下载：21/0  |  提交时间：2012/03/24 MICROFABRICATED CHANNEL STRUCTURES  CAPILLARY-ELECTROPHORESIS  MICROFLUIDIC DEVICES  COMPUTER-SIMULATIONS  BIOLOGICAL SAMPLES  GLASS CHIPS  PROTEINS  SYSTEM  PRECONCENTRATION  SEPARATIONS   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.   Numerical analysis of an electrokinetic double-focusing injection technique for microchip CE 期刊论文  OAI收割 ELECTROPHORESIS, 2006, 卷号: 27, 期号: 24, 页码: 5009-5019 Zhuang, GS; Li, G; Jin, QH; Zhao, JL; Yang, MS 收藏  |  浏览/下载：29/0  |  提交时间：2011/12/17 MICROFABRICATED CHANNEL STRUCTURES  CAPILLARY ELECTROPHORESIS DEVICES  MICROFLUIDIC DEVICES  COMPUTER-SIMULATIONS  BIOLOGICAL SAMPLES  GLASS CHIPS  PROTEINS  SYSTEM  PRECONCENTRATION  SEPARATIONS