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Chinese Academy of Sciences Institutional Repositories Grid
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N-2/H(2)Non-thermal Transferred arc Plasma Nitriding Treatment of Stainless Steel at Atmospheric Pressure 期刊论文  OAI收割
PLASMA CHEMISTRY AND PLASMA PROCESSING, 2020
作者:  
Guo, Q. J.;  Zhao, Y. J.;  Ni, G. H.;  Li, L.;  Lin, Q. F.
  |  收藏  |  浏览/下载:40/0  |  提交时间:2020/10/23
Distinguish the Role of DBD-Accompanying UV-Radiation in the Degradation of Bisphenol A 期刊论文  OAI收割
PLASMA CHEMISTRY AND PLASMA PROCESSING, 2016, 卷号: 36, 期号: 2, 页码: 585-598
作者:  
Zhang, Hong;  Huang, Qing;  Li, Lamei;  Ke, Zhigang;  Wang, Qi
  |  收藏  |  浏览/下载:31/0  |  提交时间:2017/10/30
Nanoscale zero-valent iron particles modified on reduced graphene oxides using a plasma technique for Cd(II) removal 期刊论文  OAI收割
JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 2016, 卷号: 59, 期号: 无, 页码: 389-394
作者:  
Li, Jie;  Chen, Changlun;  Zhu, Kairuo;  Wang, Xiangke
收藏  |  浏览/下载:17/0  |  提交时间:2017/07/27
Arc Root Motion In An Argon-Hydrogen Dc Plasma Torch 期刊论文  OAI收割
IEEE Transactions on Plasma Science, 2008, 页码: 1050-1051
作者:  
Huang HJ(黄河激);  Pan WX(潘文霞);  Wu CK(吴承康)
收藏  |  浏览/下载:553/61  |  提交时间:2009/08/03
Enhancing adhesion between diamond film and WC-Co substrate 期刊论文  OAI收割
ACTA METALLURGICA SINICA, 2006, 卷号: 42, 期号: 7, 页码: 763-769
作者:  
Li Jianguo;  Hu Dongping;  Mei Jun;  Liu Shi;  Li Yiyi
  |  收藏  |  浏览/下载:16/0  |  提交时间:2021/02/02
Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文  OAI收割
Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W.
收藏  |  浏览/下载:25/0  |  提交时间:2013/03/25
We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h  a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range  from 80 to 300 K  but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.