中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共5条,第1-5条 帮助

条数/页: 排序方式:
One-step supramolecular preorganization constructed crinkly graphitic carbon nitride nanosheets with enhanced photocatalytic activity 期刊论文  OAI收割
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 卷号: 104, 页码: 155-162
作者:  
Wang, Songcan;  Li, Yuelin;  Wang, Xin;  Zi, Guohao;  Zhou, Chenyang
  |  收藏  |  浏览/下载:32/0  |  提交时间:2022/07/01
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文  OAI收割
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.; Su S.; Yi X.; Mei T.
收藏  |  浏览/下载:25/0  |  提交时间:2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural  electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing  and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance  Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications  Switzerland.  
Limiting factors of driving hall element by pulsed power supply 期刊论文  OAI收割
key engineering materials, 2011, 卷号: 480-481, 页码: 786-789
Chen, Xuelei
收藏  |  浏览/下载:47/0  |  提交时间:2012/06/14
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文  OAI收割
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Shu Q; Shu YC; Zhang GJ; Liu RB; Yao JH; Pi B; Xing XD; Lin YW; Xu JJ; Wang ZG
收藏  |  浏览/下载:69/0  |  提交时间:2010/04/11
High electron mobility of modulation doped gaas after growing inp by solid source molecular beam epitaxyd 期刊论文  iSwitch采集
Transactions of nonferrous metals society of china, 2005, 卷号: 15, 期号: 2, 页码: 332-335
作者:  
Shu, YC;  Pi, B;  Lin, YW;  Xing, XD;  Yao, JH
收藏  |  浏览/下载:37/0  |  提交时间:2019/05/12