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Improved Horvitz-Thompson estimator in survey sampling 期刊论文  OAI收割
SURVEY METHODOLOGY, 2019, 卷号: 45, 期号: 1, 页码: 165-184
作者:  
Zong, Xianpeng;  Zhu, Rong;  Zou, Guohua
  |  收藏  |  浏览/下载:40/0  |  提交时间:2020/01/10
An improved destripe noises method for TDI-CCD images (EI CONFERENCE) 会议论文  OAI收割
2011 International Conference on Mechatronic Science, Electric Engineering and Computer, MEC 2011, August 19, 2011 - August 22, 2011, Jilin, China
作者:  
He B.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
Destriping of TDI-CCD remote sensing image (EI CONFERENCE) 会议论文  OAI收割
2010 3rd International Conference on Advanced Computer Theory and Engineering, ICACTE 2010, August 20, 2010 - August 22, 2010, Chengdu, China
作者:  
He B.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25
Based on the characteristic of striping noise in remote sensing images  a new destriping technique for the improved threshold function using lifting wavelet transform is presented in this letter. It can overcome the shortcoming of the hard threshold function and soft threshold function. The lifting wavelet transform is easily realized. Also it is inexpensive in computer time and storage space compared with the traditional wavelet transform. We also compare the improved threshold function with some traditional threshold functions both by visual inspection and by appropriate indexes of quality of the denoised images. Evaluations of the results based on several image quality indexes indicate that image quality has been improved after destriping. The destriped images are not only visually more plausible but also suitable for computerized analysis and it did better than the existed ones. 2010 IEEE.  
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
Creep deformation characteristics of discontinuously reinforced aluminium-matrix composites 期刊论文  OAI收割
Composites Science and Technology, 2001, 卷号: 61, 期号: 5, 页码: 771-786
Z. Y. Ma; S. C. Tjong
收藏  |  浏览/下载:17/0  |  提交时间:2012/04/14
Creep behaviour of aluminium strengthened by fine aluminium carbide particles and reinforced by silicon carbide particulates - DS Al-SiC/Al4C3 composites 期刊论文  OAI收割
Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing, 1999, 卷号: 268, 期号: 1-2, 页码: 236-245
S. J. Zhu; L. M. Peng; Q. Zhou; Z. Y. Ma; K. Kucharova; J. Cadek
收藏  |  浏览/下载:20/0  |  提交时间:2012/04/14