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	Investigation on thermal properties of a new Nd-doped phosphate glass 期刊论文 OAI收割 ceram. int., 2014, 卷号: 40, 期号: 8, 页码: 13389 作者: Li, Weiwei; He, Dongbing; Li, Shunguang; Chen, Wei; Hu, Lili 收藏 \| 浏览/下载：35/0 \| 提交时间：2016/11/28 Thermal expansion Phosphate glass Thermo-optic property High average power laser
	Investigation on thermal properties of a new Nd-doped phosphate glass 期刊论文 OAI收割 ceram. int., 2014, 卷号: 40, 期号: 8, 页码: 13389 作者: Li, Weiwei; He, Dongbing; Li, Shunguang; Chen, Wei; Hu, Lili 收藏 \| 浏览/下载：25/0 \| 提交时间：2016/11/28 Thermal expansion Phosphate glass Thermo-optic property High average power laser
	High-efficiency 17 W, 80 MHz repetition rate, passively mode-locked TEM00 Nd:YAG oscillator pumped at 885 nm 期刊论文 OAI收割 LASER PHYSICS, 2011, 卷号: 21, 期号: 3, 页码: 435 Zhang, XF; Li, FQ; Zong, N; Le, XY; Cui, DF; Xu, ZY 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/09/17 HIGH AVERAGE POWER ND-YAG LASER COMPOSITE CRYSTAL SATURABLE ABSORBER SESAM
	Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping 期刊论文 OAI收割 CHINESE OPTICS LETTERS, 2011, 卷号: 9, 期号: 4 Li, FQ; Zong, N; Wang, ZC; Han, L; Bo, Y; Peng, QJ; Cui, DF; Xu, ZY 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/09/24 PUMPED NDYVO4 LASER HIGH-AVERAGE-POWER ND/YVO4 LASER ND-YVO4 EFFICIENCY OPERATION END NM
	High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang X.; Wang L. 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle the average driving power in the laser chip is quite low so the heating effect cemiconductor laser is very small using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.
	High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.
	Study on LD-pumped Nd:YAG laser cutter (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Zhang G.; Zhang G.; Zhang G.; Zhang J.; Zhang J. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 The theory of laser cutter and the technology neck is analyzed. We can conclude that it is almost impossible to deal with the waste thick silicon wafers which are yielded in producing silicon wafers by conventional eroding or diamond cutting when the cutting velocity equals 100mm/min while it is also unperfected with ecumenical laser cutter without good beam quality or precise laseroptics system. It is represented that high average power and high repetition rate laser with good beam quality and precise laseroptics system are pivotal to obtain excellent cutting effect such as thick groove depth double-layer 0.75mm thick silicon wafer can be penetrated.. The cross section is fine and the groove is narrow rapid cutting speed the cutting quality meets the expecting demand. fine kerf section without considering the effect of technique. Considering laser medium thermal lens effect and thermal focal length changing with pumping power using plano-convex high reflectivity mirror as the back cavity mirror to compensate the heat lens influence a /4 waveplate to compensate heat -induced birefraction utilize the Nd:YAG self- aperture effect more than 50 W average power 1.064 um IR output is obtained with beam quality factor (M2) equals 3.19. Through the LD-Pumped Nd:YAG laser cutter we developed with short focus length negative spherical aberration focusing lens double axis linear step motor positioning system suitable beam expander multiplying factor appropriate diameter of exit beam aperture proper repetition rate when the cutting velocity equals 400mm/min 0.75mm thick silicon wafer can be penetrated
	铬、钕双掺钆镓石榴石（Cr^4＋，Nd^3＋）：Gd3Ga5O12激光晶体光学性能的研究期刊论文 OAI收割光学学报, 2005, 卷号: 25, 期号: 4, 页码: 511, 514 姜本学; 赵志伟; 徐晓东; 宋平新; 王晓丹; 张连翰; 何晓明; 徐军收藏 \| 浏览/下载：1497/293 \| 提交时间：2009/09/24 光学材料 optical materials （Cr^4+，Nd^3+）:GGG (Cr4+,Nd3+)∶GGG 光谱性质 spectral properties 高功率同体激光晶体 high-average power laser crystal