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	25th Anniversary Article: Carbon Nanotube- and Graphene- Based Transparent Conductive Films for Optoelectronic Devices 期刊论文 OAI收割 Advanced Materials, 2014, 卷号: 26, 期号: 13, 页码: 1958-1991 J. H. Du; S. F. Pei; L. P. Ma; H. M. Cheng 收藏 \| 浏览/下载：65/0 \| 提交时间：2014/07/03 carbon nanotubes graphene transparent conductive films optoelectronic devices chemical-vapor-deposition organic solar-cells liquid-phase exfoliation single-layer graphene light-emitting-diodes large-area graphene flexible display applications high-quality graphene wafer-scale synthesis thin-films
	Double-wall carbon nanotube transparent conductive films with excellent performance 期刊论文 OAI收割 Journal of Materials Chemistry A, 2014, 卷号: 2, 期号: 4, 页码: 1159-1164 P. X. Hou; B. Yu; Y. Su; C. Shi; L. L. Zhang; C. Liu; S. S. Li; J. H. Du; H. M. Cheng 收藏 \| 浏览/下载：114/0 \| 提交时间：2014/02/19 chemical-vapor-deposition high-quality thin-films optical-properties purification fabrication
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：41/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
	磁过滤阴极弧等离子体法氮化钛薄膜的制备及其应用性能的研究学位论文 OAI收割理学博士: 中国科学院研究生院, 2004 张玉娟收藏 \| 浏览/下载：68/0 \| 提交时间：2014/04/14 磁过滤阴极弧等离子体高质量薄膜机械性能电化学腐蚀性能应用机理 TiN Filtered cathode arc plasma High quality thin films Mechanical properties Electrochemistry corrosion Application Mechanism