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	High-efficiency longwave 2085 nm laser output in low-loss Ho3+-doped fluorotellurite glass fiber by 1976 nm in-band pumping 期刊论文 OAI收割 Optics and Laser Technology, 2024, 卷号: 177 作者: Feng, Shaohua; Shen, Yewei; Zhu, Jun; Liu, Chengzhen; Xu, Yantao \| 收藏 \| 浏览/下载：24/0 \| 提交时间：2024/09/04 Ho3+-doped Fluorotellurite glass Fiber laser High slope efficiency High damage threshold
	Yb-doped large-mode-area aluminosilicate laser fibre fabricated by chelate precursor doping technique 期刊论文 OAI收割 electronics letters, 2016, 卷号: 52, 期号: 23, 页码: 1942-u42 作者: Peng, Kun; Wang, Zhen; Zhan, Huan; Ni, Li; Gao, Cong 收藏 \| 浏览/下载：118/0 \| 提交时间：2016/11/22 ytterbium aluminium compounds doping optical fibre fabrication optical fibre testing electron probe analysis secondary ion mass spectroscopy laser beams optical fibre amplifiers AlSiO:Yb power 1 kW efficiency 81 0 percent slope efficiency laser output two-stage master oscillator power amplifier system time-of-flight secondary ion mass spectrometry electron probe microanalysis fibre testing numerical aperture homogeneous large-core preform gas flow control system high-purity materials chelate precursor doping technique large mode area aluminosilicate laser fibre
	808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.
	High power output and temperature characteristics of 1.06m diode array module (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Yao S.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：61/0 \| 提交时间：2013/03/25 In this paper high power diode array module with an emission wavelength of 1.06m is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20C to 40C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20C. The central wavelength is 1059.4nm.