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	Temperature distribution induced spectral broadening of high-power diode lasers 会议论文 OAI收割 San Francisco, CA, United states, 2020-02-03 作者: Wu, DI-Hai; Zhang, Pu; Liu, Bin; Zah, Chung-En; Liu, Xingsheng \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2020/05/18 High-power diode lasers spectral power distribution (SPD) spectral broadening temperature distribution
	Performance of high-power diode lasers operated at cryogenic temperature 会议论文 OAI收割 Hangzhou, China, 2019-10-21 作者: Zhang, Pu; Wang, Mingpei; Nie, Zhiqiang; Yang, Wuhao \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2020/03/04 High-power diode lasers cryogenic temperature thermal characteristics
	High power diode laser with beam coupling (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang L.; Liu Y.; Wang L.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：61/0 \| 提交时间：2013/03/25 As the increasing applications of the semiconductor lasers in the laser processing the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper it mainly introduces the beam shaping and the technology of spatial coupling polarization coupling and wavelength coupling. The coupling key elements are presented and indicated. Finally the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.
	Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Qin L. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 Firstly the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given and the output characteristic was simple calculated. Then in experiment the VECSELs were grown bonded on to the heat sink and optically pumped by high-power 808nm diode laser array with fiber output module the light emission spectra were measured. Finally The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.
	808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.
	Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang L.; Qin L.; Wang L.; Wang L. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 Temperature characteristics of several familiar high power diode lasers with broad area whose wavelength was separately 808 nm 810 nm 940 nm and 980 nm were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures different structures were attempted. For the 808 nm structure we tried different barrier thicknesses. For the 810 nm structure different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper the widths of these devices were all 100 m. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application. 2008 SPIE.
	Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Qin L.; Jiang H.; Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 We describe design numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure drawing on the advantages of both. With periodical gain element structure optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.