中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共20条,第1-10条 帮助

条数/页: 排序方式:
Effect of introducing KNO3 on the preparation of athermal fluorophosphate glass and investigation on its thermo-optical property 期刊论文  OAI收割
Optical Materials, 2023, 卷号: 145
作者:  
Gao, Fei;  Zhang, Faqiang;  Yang, Liqing;  Ma, Zhiyuan;  Yang, Feng
  |  收藏  |  浏览/下载:30/0  |  提交时间:2023/10/30
Yb-doped large-mode-area aluminosilicate laser fibre fabricated by chelate precursor doping technique 期刊论文  OAI收割
electronics letters, 2016, 卷号: 52, 期号: 23, 页码: 1942-u42
作者:  
Peng, Kun;  Wang, Zhen;  Zhan, Huan;  Ni, Li;  Gao, Cong
收藏  |  浏览/下载:118/0  |  提交时间:2016/11/22
Passive Phase Locking of Three Nanosecond Fiber Amplifiers Using a Dammann Grating Spatial Filter 期刊论文  OAI收割
chin. phys. lett., 2014, 卷号: 31, 期号: 8, 页码: 84206
作者:  
Yang Yi-Feng;  Zheng Ye;  He Bing;  Zhou Jun;  Liu Hou-Kang
收藏  |  浏览/下载:13/0  |  提交时间:2016/11/28
Passive Phase Locking of Three Nanosecond Fiber Amplifiers Using a Dammann Grating Spatial Filter 期刊论文  OAI收割
chin. phys. lett., 2014, 卷号: 31, 期号: 8, 页码: 84206
作者:  
Yang Yi-Feng;  Zheng Ye;  He Bing;  Zhou Jun;  Liu Hou-Kang
收藏  |  浏览/下载:25/0  |  提交时间:2016/11/28
KW-output high beam quality diode laser array source (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China
作者:  
Zhang J.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载:38/0  |  提交时间:2013/03/25
Field-line coupling interference prediction of LCD module in high-power TEA CO2 laser system (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China
Ge X.; Li X.
收藏  |  浏览/下载:16/0  |  提交时间:2013/03/25
Research of real-time control and calibration on laser energy simulator for optoelectronic confrontation HWIL system (EI CONFERENCE) 会议论文  OAI收割
2011 International Conference on Electronics, Communications and Control, ICECC 2011, September 9, 2011 - September 11, 2011, Ningbo, China
作者:  
Wang J.-J.
收藏  |  浏览/下载:20/0  |  提交时间:2013/03/25
Pulse compression and beam focusing with segmented diffraction gratings in a high-power chirped-pulse amplification glass laser system 期刊论文  OAI收割
optics letters, 2010, 卷号: vol. 35, 期号: no. 11, 页码: 1783
Hideaki Habara; Guang Xu; Takahisa Jitsuno; Ryosuke Kodama; Kenji Suzuki; Kiyonobu Sawai; Kiminori Kondo; Noriaki Miyanaga; Kazuo A. Tanaka; Kunioki Mima; Michael C. Rushford; Jerald A. Britten; and Christopher P. J. Barty
收藏  |  浏览/下载:88/8  |  提交时间:2011/03/25
Inhibition of electromagnetic interference in control system based on DSP of high-power TEA CO2 laser (EI CONFERENCE) 会议论文  OAI收割
2010 International Conference on Computer, Mechatronics, Control and Electronic Engineering, CMCE 2010, August 24, 2010 - August 26, 2010, Changchun, China
作者:  
Meng F.-J.;  Guo L.-H.;  Wang H.-Q.
收藏  |  浏览/下载:41/0  |  提交时间:2013/03/25
The strong electromagnetic interference (EMI) generated in high-power TEA C02 laser system mainly comes from main discharge circuit  pulse spark switch and power supply. Such strong EMI causes great damage and interference to the control system based on DSP. In this paper  we present the interference sources and their distribution and propose the methods of anti-interference. Measures for hardware design include weakening transient ground potential difference by using equipotential lines between devices  using signal isolation interface to inhibit the transient ground potential interference  and rational layout  shielding and filtering to the control system. And methods for software design include range-limited filter  self-diagnosis and self-repair for the critical data and anti-interference during abnormal reset. The EMI has been inhibited effectively by the anti-interference method proposed above. The result shows that: the software anti-interference method is as important as the hardware anti-interference method for the control system in a complex environment of strong EMI. 2010 IEEE.  
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:  
Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.