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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [10]
金属研究所 [6]
过程工程研究所 [5]
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期刊论文 [23]
会议论文 [4]
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半导体材料 [5]
Aluminum O... [1]
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Process mechanism of aluminum extraction from secondary aluminum dross by roasting with ammonium sulfate
期刊论文
OAI收割
Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals, 2022, 卷号: 32, 期号: 5, 页码: 1418-1429
作者:
Lei, Bing-Hong
;
Liu, Hong-Hui
;
Zhang, Hong-Ling
;
Zhang, Di
;
Dong, Yu-Ming
  |  
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2023/06/26
Alumina - Aluminum hydroxide - Aluminum nitride - Ammonia - Calcination - Calcium fluoride - Decomposition - Fluorspar - III-V semiconductors - Infrared spectroscopy - Sodium compounds - Zinc sulfide
Improvement in the charge dissipation performance of epoxy resin composites by incorporating amino-modified boron nitride nanosheets
期刊论文
OAI收割
Materials Letters, 2021, 卷号: 298
作者:
He, Shaojian
;
Luo, Chumeng
;
Zheng, Youzhe
;
Xue, Yang
;
Song, Xupeng
  |  
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2023/06/21
Nanosheets - Nitrides - Urea - Fillers - Boron nitride - III-V semiconductors
Improved thermal conductivity of styrene acrylic resin with carbon nanotubes, graphene and boron nitride hybrid fillers
期刊论文
OAI收割
Carbon Resources Conversion, 2021, 卷号: 4, 页码: 190-196
作者:
Jia, Fuhua
;
Fagbohun, Emmanuel Oluwaseyi
;
Wang, Qianyu
;
Zhu, Duoyin
;
Zhang, Jianling
  |  
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2023/06/21
Aggregates - Nitrides - Boron nitride - Temperature - Graphene - III-V semiconductors - Multiwalled carbon nanotubes (MWCN) - Resins - Fillers - Gas emissions - Thermal conductivity
Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors
期刊论文
OAI收割
Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133
作者:
Y.Wu
;
Z.Li
;
K.-W.Ang
;
Y.Jia
;
Z.Shi
  |  
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2020/08/24
Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si
期刊论文
OAI收割
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:
Feng, Meixin
;
Li, Zengcheng
;
Wang, Jin
;
Zhou, Rui
;
Sun, Qian
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/09/17
Ultraviolet lasers
Aluminum alloys
Aluminum gallium nitride
Aluminum nitride
Defects
Gallium alloys
III-V semiconductors
Lasers
Lattice mismatch
Quantum well lasers
Semiconductor alloys
Semiconductor quantum wells
Stresses
Thermal expansion
Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method
期刊论文
OAI收割
JOURNAL OF INORGANIC MATERIALS, 2017, 卷号: 32, 期号: 2, 页码: 215-218
作者:
Wang Hua-Jie
;
Liu Xue-Chao
;
Kong Hai-Kuan
;
Xin Jun
;
Gao Pan
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2017/05/05
III-V semiconductors
aluminum nitride
hexagonal microrod
physical vapor transport
Studies of Physical and Chemical Properties of Two-Dimensional Hexagonal Crystals by First-Principles Calculation
期刊论文
OAI收割
Journal of the Physical Society of Japan, 2010, 卷号: 79, 期号: 6
S. Q. Wang
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2012/04/13
2D crystals
orbital hybridization
elastic moduli
first-principles
calculation
iii-v compounds
elastic-constants
silicon-nitride
graphene
pseudopotentials
membranes
graphite
phase
Structural, electronic, and optical properties of wurtzite and rocksalt InN under pressure
期刊论文
OAI收割
Physical Review B, 2010, 卷号: 81, 期号: 3
M. Y. Duan
;
L. He
;
M. Xu
;
M. Y. Xu
;
S. Y. Xu
;
K. Ostrikov
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/04/13
density-functional theory
iii-v nitrides
indium nitride
stability
energy
gap
Transport properties and induced voltage in the structure of water-filled single-walled boron-nitrogen nanotubes
会议论文
OAI收割
Conference on Advances in Microfluidics and Nanofluidics, Hong Kong Univ Sci & Technol, Hong Kong, PEOPLES R CHINA, 2009
作者:
Yuan QZ
;
Zhao YP
;
Zhao YP(赵亚溥)
收藏
  |  
浏览/下载:943/81
  |  
提交时间:2009/07/23
Boron Compounds
Density Functional Theory
Diffusion
Iii-V Semiconductors
Molecular Dynamics Method
Nanofluidics
Pipe Flow
Semiconductor Nanotubes
Wide Band Gap Semiconductors
Carbon Nanotubes
Molecular-Dynamics
Nitride Nanotubes
Channel
Flow
Liquids
Transport Properties And Induced Voltage In The Structure Of Water-Filled Single-Walled Boron-Nitrogen Nanotubes
期刊论文
OAI收割
Biomicrofluidics, 2009
作者:
Yuan QZ(袁泉子)
;
Zhao YP(赵亚溥)
;
Zhao YP
收藏
  |  
浏览/下载:1280/140
  |  
提交时间:2009/08/03
Boron Compounds
Density Functional Theory
Diffusion
Iii-V Semiconductors
Molecular Dynamics Method
Nanofluidics
Pipe Flow
Semiconductor Nanotubes
Wide Band Gap Semiconductors
Carbon Nanotubes
Molecular-Dynamics
Nitride Nanotubes
Channel
Flow
Liquids