机构

• 合肥物质科学研究院 [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [2]
• 会议论文 [1]

发表日期

• 2021 [1]
• 2018 [1]
• 2010 [1]

学科主题

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Study of the tungsten sputtering source suppression by wall conditionings in the EAST tokamak 期刊论文  OAI收割 Plasma Science and Technology, 2021, 卷号: 23 作者:  WANG,Junru;  YU,Yaowei;  WANG,Houyin;  CAO,Bin;  HU,Jiansheng   |  收藏  |  浏览/下载：35/0  |  提交时间：2021/05/24 tungsten sputtering source  carbon impurity  wall conditioning  PWI  EAST   Metallic impurity sources behavior during ICRH in EAST 期刊论文  OAI收割 NUCLEAR MATERIALS AND ENERGY, 2018, 卷号: 17, 期号: 无, 页码: 274-278 作者:  Urbanczyk, G.;  Zhang, X. J.;  Colas, L.;  Ekedahl, A.;  Heuraux, S.   |  收藏  |  浏览/下载：30/0  |  提交时间：2020/03/31 ICRH  Impurity source  EUV spectrometer   The novel facet coating technology for 808nm semiconductor laser (EI CONFERENCE) 会议论文  OAI收割 2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, July 28, 2010 - August 1, 2010, Harbin, China 作者:  Liu Y.;  Qin L.;  Li Z.;  Li Z.;  Wang L. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology  semiconductor laser are cleaved in the air  and the surface oxide layer is removed with a low energy ion source  flowed immediately by coating the facet with thin ZnSe layer of 20 nm. The function of this layer is to protect semiconductor laser facet  and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results show that the output power of the semiconductor laser with the ZnSe coated layer is 13% higher than that of the Si coated layer  and 47% higher than that of the oxide coated film. The device coated oxide film is damaged when current is 4.5 A  and the device coated with Si layer is damaged when current is 5.5 A  the final failed device is coated with ZnSe layer. In conclusion  the method of coating ZnSe layer on the semiconductor laser facet can prevent effectively the catastrophic optical mirror damage  and increase the output power of semiconductor lasers. 2010 IEEE.