机构

• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [1]

内容类型

• 会议论文 [1]

发表日期

• 2012 [1]

学科主题

筛选

浏览/检索结果: 共1条，第1-1条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 InGaAs nanoflowers grown by MOCVD (EI CONFERENCE) 会议论文  OAI收割 2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012, Xi'an, China 作者:  Zhang T. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 InGaAs nanoflowers have been prepared on InP substrates by MOCVD  using TMIn  TMGa and AsH3 as reactive precursors at 420 C. Through observation by scanning electron microscopy  we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared  when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As. (2012) Trans Tech Publications  Switzerland.