中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共11条,第1-10条 帮助

条数/页: 排序方式:
CO2-induced evolution of chemical, structural and mechanical properties of reinforced concrete: A review 期刊论文  OAI收割
CONSTRUCTION AND BUILDING MATERIALS, 2022, 卷号: 353, 期号: -, 页码: -
作者:  
Xue, Quan;  Zhang, Liwei;  Mei, Kaiyuan;  Li, Xiaochun;  Newell, Pania
  |  收藏  |  浏览/下载:10/0  |  提交时间:2023/08/02
Improved photocatalytic activity of BaTiO3/La2Ti2O7 heterojunction composites via piezoelectric-enhanced charge transfer 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2021, 卷号: 570, 页码: 9
作者:  
Li, Yaoyu;  Li, Rong;  Zhai, Yue;  Huang, Yu;  Lee, Shuncheng
  |  收藏  |  浏览/下载:37/0  |  提交时间:2022/08/18
X-ray-Based Techniques to Study the Nano-Bio Interface 期刊论文  OAI收割
ACS NANO, 2021, 卷号: 15, 期号: 3, 页码: 3754-3807
作者:  
Sanchez-Cano, Carlos;  Alvarez-Puebla, Ramon A.;  Abendroth, John M.;  Beck, Tobias;  Blick, Robert
  |  收藏  |  浏览/下载:26/0  |  提交时间:2021/12/22
Band Modulation and Interfacial Engineering to Generate Efficient Visible-Light-Induced Bifunctional Photocatalysts 期刊论文  OAI收割
ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2020, 卷号: 8, 期号: 7, 页码: 2919-2930
作者:  
Hua, Qingfeng;  Zhou, Xin;  Zhang, Bingsen;  Wang, Min;  Liu, Jing
  |  收藏  |  浏览/下载:24/0  |  提交时间:2021/02/02
Band Modulation and Interfacial Engineering to Generate Efficient Visible-Light-Induced Bifunctional Photocatalysts 期刊论文  OAI收割
ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2020, 卷号: 8, 期号: 7, 页码: 2919-2930
作者:  
Hua, Qingfeng;  Zhou, Xin;  Zhang, Bingsen;  Wang, Min;  Liu, Jing
  |  收藏  |  浏览/下载:23/0  |  提交时间:2021/02/02
Loss of mechanical properties in vivo and bone-implant interface strength of AZ31B magnesium alloy screws with Si-containing coating 期刊论文  OAI收割
Acta Biomaterialia, 2014, 卷号: 10, 期号: 5, 页码: 2333-2340
L. L. Tan; Q. Wang; X. Lin; P. Wan; G. D. Zhang; Q. Zhang; K. Yang
收藏  |  浏览/下载:35/0  |  提交时间:2014/07/03
Unzipped multiwalled carbon nanotubes-incorporated poly(L-lactide) nanocomposites with enhanced interface and hydrolytic degradation 期刊论文  OAI收割
MATERIALS CHEMISTRY AND PHYSICS, 2012, 卷号: 134, 期号: 2-3, 页码: 1059-1066
作者:  
He, Linghao;  Sun, Jing;  Wang, Xiuxin;  Fan, Xuehui;  Zhao, Qiaoling
  |  收藏  |  浏览/下载:19/0  |  提交时间:2019/04/09
In vivo evaluation of biodegradable magnesium alloy bone implant in the first 6 months implantation 期刊论文  OAI收割
Journal of Biomedical Materials Research Part A, 2009, 卷号: 90A, 期号: 3, 页码: 882-893
E. L. Zhang; L. P. Xu; G. N. Yu; F. Pan; K. Yang
收藏  |  浏览/下载:18/0  |  提交时间:2012/04/13
Studies on Deterioration Process of Organic Coatings Using EIS and SKP 期刊论文  OAI收割
Chemical Journal of Chinese Universities-Chinese, 2009, 卷号: 30, 期号: 4, 页码: 762-766
W. Zhang; J. Wang; Z. Y. Zhao; J. Jiang
收藏  |  浏览/下载:25/0  |  提交时间:2012/04/13
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.