中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共8条,第1-8条 帮助

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Dislocation-mediated migration of the α/β interfaces in titanium 期刊论文  OAI收割
ACTA MATERIALIA, 2023, 卷号: 261, 页码: 12
作者:  
Zhang, Jin-Yu;  Sun, Zhi-Peng;  Qiu, Dong;  Dai, Fu-Zhi;  Zhang, Yang-Sheng
  |  收藏  |  浏览/下载:8/0  |  提交时间:2024/01/07
Regulating Orientational Crystallization and Buried Interface for Efficient Perovskite Solar Cells Enabled by a Multi-Fluorine-Containing Higher Fullerene Derivative 期刊论文  OAI收割
ADVANCED FUNCTIONAL MATERIALS, 2023, 页码: 10
作者:  
Song, Peiquan;  Hou, Enlong;  Liang, Yuming;  Luo, Jiefeng;  Xie, Liqiang
  |  收藏  |  浏览/下载:15/0  |  提交时间:2024/01/08
Microstructural and Interfacial Characterization of Ti-V Diffusion Bonding Zones 期刊论文  OAI收割
METALS, 2022, 卷号: 12, 期号: 12, 页码: 15
作者:  
Liu GL(刘国亮);  Ding ML(丁美丽);  Zhang K(张坤);  Qu DD(屈丹丹);  Meng Y(孟洋)
  |  收藏  |  浏览/下载:17/0  |  提交时间:2023/02/03
Modelling discontinuous dynamic recrystallization using a quantitative multi-order-parameter phase-field method 期刊论文  OAI收割
COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 155, 页码: 298-311
作者:  
Xiao, NM;  Hodgson, P;  Rolfe, B;  Li, DZ
  |  收藏  |  浏览/下载:62/0  |  提交时间:2018/12/25
Modelling discontinuous dynamic recrystallization using a quantitative multi-order-parameter phase-field method 期刊论文  OAI收割
COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 155, 页码: 298-311
作者:  
Xiao, Namin;  Hodgson, Peter;  Rolfe, Bernard;  Li, Dianzhong
  |  收藏  |  浏览/下载:26/0  |  提交时间:2021/02/02
Migration and enrichment of chromium and silicon element in glass coating at high temperature 期刊论文  OAI收割
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2018, 卷号: 492, 页码: 18-26
作者:  
Fu, G. Y.;  Wei, L. Q.;  Zhang, X. M.;  Cui, Y. B.;  Yu, B.
  |  收藏  |  浏览/下载:30/0  |  提交时间:2018/07/17
Risks of Avian Influenza Transmission in Areas of Intensive Free-Ranging Duck Production with Wild Waterfowl SCI/SSCI论文  OAI收割
2014
作者:  
Cappelle J.;  Zhao D. L.;  Gilbert M.;  Nelson M. I.;  Newman S. H.
  |  收藏  |  浏览/下载:22/0  |  提交时间:2014/12/24
Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas 期刊论文  OAI收割
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 卷号: 19, 期号: 3, 页码: 519
Shang, XZ; Wang, WC; Wu, SD; Xing, ZG; Guo, LW; Wang, WX; Huang, Q; Zhou, JM
收藏  |  浏览/下载:20/0  |  提交时间:2013/09/17