中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Development of fiber laser system for a photocathode gun 期刊论文  OAI收割
HIGH POWER LASER AND PARTICLE BEAMS, 2015, 卷号: 27, 期号: 5, 页码: 51002
作者:  
Xu JQ(徐金强);  Sun DR(孙大睿);  Xu;  Jinqiang;  Sun
收藏  |  浏览/下载:24/0  |  提交时间:2016/04/18
High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.