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	Inkjet manipulated homogeneous large size perovskite grains for efficient and large-area perovskite solar cells 期刊论文 OAI收割 NANO ENERGY, 2018, 卷号: 46, 页码: 203-211 作者: Li, Pengwei; Liang, Chao; Bao, Bin; Li, Yanan; Hu, Xiaotian \| 收藏 \| 浏览/下载：55/0 \| 提交时间：2019/04/09 Inkjet Printing Homogeneous Large-area Large Grain Size Wetting
	Probabilistic pore healing model for prediction of relative density in heat treatment 期刊论文 OAI收割 Materials Research Innovations, 2014, 卷号: 18, 页码: 1026-1030 Y.; Liu Kan, H.; Zhang, S. H.; Zhang, L. W.; Cheng, M.; Song, H. W. 收藏 \| 浏览/下载：26/0 \| 提交时间：2015/05/08 Pore healing model Healing diagram Pore size distribution isostatic pressing diagrams sintering kinetics void closure large ingots diffusion shrinkage powder grain
	Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition 期刊论文 OAI收割 Acs Nano, 2014, 卷号: 8, 期号: 12, 页码: 12806-12813 T.; Ren Ma, W. C.; Liu, Z. B.; Huang, L.; Ma, L. P.; Ma, X. L.; Zhang, Z. Y.; Peng, L. M.; Cheng, H. M. 收藏 \| 浏览/下载：38/0 \| 提交时间：2015/05/08 graphene single crystal large size defect free chemical vapor deposition thin carbon-films grain-boundaries polycrystalline graphene controllable synthesis monolayer graphene bilayer graphene copper surface strength graphitization hydrogen
	Evaluation of Stored Energy from Microstructure of Multi-component Nanostructured Cu 期刊论文 OAI收割 Journal of Materials Science & Technology, 2012, 卷号: 28, 期号: 4, 页码: 289-293 F. Yan; H. W. Zhang 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/02/05 Stored energy Cu Dynamic plastic deformation Transmission electron microscopy dynamic plastic-deformation deformed metals large strains grain-size copper evolution nickel temperature strength texture
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.
	The enhanced ethanol sensing properties of multi-walled carbon nanotubes/SnO2 core/shell nanostructures 期刊论文 OAI收割 NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 12, 页码: 3012 Chen, YJ; Zhu, CL; Wang, TH 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/09/23 SEMICONDUCTING OXIDE NANOBELTS CRYSTALLINE SNO2 NANORODS GAS SENSORS TIN OXIDE SOLUTION-PHASE METAL-OXIDES LARGE-SCALE GRAIN-SIZE NANOCRYSTALS NANOWIRES