中国科学院机构知识库网格系统: 检索

Enhanced dissipation for the third component of 3D anisotropic Navier-Stokes equations 期刊论文 OAI收割
JOURNAL OF DIFFERENTIAL EQUATIONS, 2022, 卷号: 335, 页码: 464-496
作者: Xu, Li; Zhang, Ping

|

收藏 | 浏览/下载：29/0 | 提交时间：2023/02/07

Anisotropic Navier-Stokes equations Littlewood-Paley theory Large time behavior

GLOBAL EXISTENCE AND LARGE TIME BEHAVIOR OF THE QUANTUM BOLTZMANN EQUATION WITH SMALL RELATIVE ENTROPY 期刊论文 OAI收割
KINETIC AND RELATED MODELS, 2022, 页码: 45
作者: Wang, Yong; Xiao, Changguo; Zhang, Yinghui

|

收藏 | 浏览/下载：19/0 | 提交时间：2023/02/07

Quantum Boltzmann equation large amplitude initial data global existence fermions bosons large time behavior

On global classical solutions to 1D compressible Navier-Stokes equations with density-dependent viscosity and vacuum 期刊论文 OAI收割
MATHEMATICAL METHODS IN THE APPLIED SCIENCES, 2020, 页码: 24
作者: Lu, Boqiang; Wang, Yixuan; Wu, Yuhang

|

收藏 | 浏览/下载：44/0 | 提交时间：2020/05/24

compressible Navier-Stokes equations density-dependent viscosity global classical solutions large-time behavior vacuum

Large time behavior of entropy solutions to one-dimensional unipolar hydrodynamic model for semiconductor devices 期刊论文 OAI收割
ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 2018, 卷号: 69, 期号: 3, 页码: 12
作者: Huang, Feimin; Li, Tianhong; Yu, Huimin; Yuan, Difan

|

收藏 | 浏览/下载：23/0 | 提交时间：2018/07/30

Isentropic Euler-Poisson equations Compensated compactness Entropy solution Vanishing viscosity Large time behavior

Weighted Decay Results for the Nonstationary Stokes Flow and Navier-Stokes Equations in Half Spaces 期刊论文 OAI收割
JOURNAL OF MATHEMATICAL FLUID MECHANICS, 2015, 卷号: 17, 期号: 4, 页码: 599-626
作者: Han, Pigong

|

收藏 | 浏览/下载：23/0 | 提交时间：2018/07/30

Navier-Stokes equations Stokes solution formula large-time behavior strong solution

LARGE TIME BEHAVIOR AND QUASINEUTRAL LIMIT OF SOLUTIONS TO A BIPOLAR HYDRODYNAMIC MODEL WITH LARGE DATA AND VACUUM 期刊论文 OAI收割
DISCRETE AND CONTINUOUS DYNAMICAL SYSTEMS, 2009, 卷号: 24, 期号: 2, 页码: 455-470
作者: Huang, Feimin

|

收藏 | 浏览/下载：13/0 | 提交时间：2018/07/30

Bipolar hydrodynamic model large time behavior quasineutral limit entropy solution energy estimates

Large time behavior of Euler-Poisson system for semiconductor 期刊论文 OAI收割
SCIENCE IN CHINA SERIES A-MATHEMATICS, 2008, 卷号: 51, 期号: 5, 页码: 965-972
作者: Huang FeiMin; Pan RongHua; Yu HuiMin

|

收藏 | 浏览/下载：13/0 | 提交时间：2018/07/30

large time behavior Euler-Possion system semiconductor entropy

Convergence to equilibria and blowup behavior of global strong solutions to the Stokes approximation equations for two-dimensional compressible flows with large data 期刊论文 OAI收割
JOURNAL DE MATHEMATIQUES PURES ET APPLIQUEES, 2006, 卷号: 86, 期号: 6, 页码: 471-491
作者: Huang, Feimin; Li, Jing; Xin, Zhouping

|

收藏 | 浏览/下载：14/0 | 提交时间：2018/07/30

stokes approximation equations large external potential forces large-time behavior uniform upper bound vacuum blowup

Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H.

收藏 | 浏览/下载：30/0 | 提交时间：2013/03/25

The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.

Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors 期刊论文 OAI收割
JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS, 2005, 卷号: 312, 期号: 2, 页码: 596-619
作者: Chen, L; Hsiao, L; Li, Y

|

收藏 | 浏览/下载：9/0 | 提交时间：2018/07/30

energy transport drift diffusion large time behavior energy relaxation time limit entropy inequality