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	Quasi-three-level Nd:GdYNbO4 927 nm laser under 879 nm laser diode pumping 期刊论文 OAI收割 LASER PHYSICS, 2018, 卷号: 28, 期号: 8, 页码: 5 作者: Yan, Renpeng; Zhao, Chuang; Li, Xudong; Li, Kang; Yu, Xin \| 收藏 \| 浏览/下载：47/0 \| 提交时间：2019/11/12 laser diode (LD) pumped quasi-three-level direct pumping Nd:GdYNbO4
	Analysis of spectrum narrowing of diode laser bar (EI CONFERENCE) 会议论文 OAI收割 Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China 作者: Liu Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 Laser diode bar (LDB) are used increasingly often for many applications but spectral bandwidth of LDB are generally approximately 2-4nm far too wide for many demanding applications e.g. spin-exchange optical pumping terahertz generation and lidar. External-cavity feedback can improve the spectral properties of LD or LDB. However spectrum narrowing of LDB is more difficult than that of LD. Bar curvature (i.e. "smile") produced in the manufacturing process affects the spectrum narrowing greatly. By geometrical optics approach and ORIGIN software smile which can be corrected by plano-convex cylindrical lens is simulated and the result is in good agreement with experiment. The selection of grating which is also a critical factor of spectrum narrowing will be stated. Finally an external cavity consisting of fast axis collimator two plano-convex cylindrical lens and a diffraction grating is used. The scheme is implemented on a 19-element LDB and yields 3-fold reduction in spectral linewidth under the situation that all optical elements in the system which are not optimized. Further we use a slit in the experiment and analyze the spectrum narrowing of each element in LDB.
	高稳定激光二极管抽运Nd∶YLF再生放大器期刊论文 OAI收割中国激光, 2008, 卷号: 35, 期号: 2, 页码: 187, 190 王江峰; 朱海东; 李学春; 朱健强收藏 \| 浏览/下载：1293/282 \| 提交时间：2009/09/18 激光技术 Laser diode (LD) pumping 再生放大 Laser technique 多程放大 Multipass amplification 激光二极管抽运 Regenerative amplification
	Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Qin L. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 By using bottom-emitting structure we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron heavy and light holes. According to the transition selection rule we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells we calculated the gain of VECSEL using transition matrix elements of electron heavy and light holes. We give out the threshold gain output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.