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	Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions 期刊论文 OAI收割 APPLIED SURFACE SCIENCE, 2022, 卷号: 574, 页码: 11 作者: Zheng, Hang Yu; Bai, Yu; Shao, Yan; Yu, Hai Yi; Chen, Bing \| 收藏 \| 浏览/下载：32/0 \| 提交时间：2022/07/01 Ferroelectric multilayer junction Resistive switching Ferroelectric field effect Depletion layer width
	Dimensional characteristics of Ti-6Al-4V thin-walled parts prepared by wire-based multi-laser additive manufacturing in vacuum 期刊论文 OAI收割 RAPID PROTOTYPING JOURNAL, 2019, 卷号: 25, 期号: 5, 页码: 849-856 作者: Du, Farui; Zhu, Jinqian; Ding, Xueping; Zhang, Qi; Ma, Honglin \| 收藏 \| 浏览/下载：67/0 \| 提交时间：2019/12/03 Additive manufacturing Vacuum Ti-6Al-4V Dimensional characteristic Layer width Thin-walled part
	Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文 OAI收割 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China 作者: Liu Y.; Liu Y.; Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1 2 and 3) in one period QW depth barrier width the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications Switzerland.
	ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE) 会议论文 OAI收割 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：163/0 \| 提交时间：2013/03/25 ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD)[1 2 3] with a buffer layer of SiNx grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50 indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179. 2008 IEEE.
	Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 OAI收割 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏 \| 浏览/下载：18/0 \| 提交时间：2010/10/29 molecular beam epitaxy InGaAs islands photolumineseence line-width 1.3 MU-M INAS/GAAS QUANTUM DOTS OPTICAL-PROPERTIES CAP LAYER GAAS LUMINESCENCE STRAIN