机构

• 化学研究所 [2]
• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [1]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2011 [2]
• 2006 [1]
• 2002 [1]
• 2001 [1]

学科主题

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Organic light-emitting diodes with integrated inorganic photo detector for near-infrared optical up-conversion 期刊论文  iSwitch采集 Organic electronics, 2011, 卷号: 12, 期号: 12, 页码: 2090-2094 作者:  Guan, Min;  Li, LinSen;  Cao, GuoHua;  Zhang, Yang;  Wang, BaoQiang 收藏  |  浏览/下载：37/0  |  提交时间：2019/05/12 Hybrid up-conversion device  Organic light-emitting diode  Moo(3)-doped cupc  Interface layer   Organic light-emitting diodes with integrated inorganic photo detector for near-infrared optical up-conversion 期刊论文  OAI收割 ORGANIC ELECTRONICS, 2011, 卷号: 12, 期号: 12, 页码: 2090-2094 作者:  Guan, Min;  Li, LinSen;  Cao, GuoHua;  Zhang, Yang;  Wang, BaoQiang   |  收藏  |  浏览/下载：38/0  |  提交时间：2021/02/02 Hybrid up-conversion device  Organic light-emitting diode  MoO(3)-doped CuPc  Interface layer   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.   Synthesis of novel nitrogen- and sulfur-containing conjugated polymers used as hole-transporting materials for organic light-emitting diodes 期刊论文  OAI收割 JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2002, 卷号: 40, 期号: 9, 页码: 1321-1333 作者:  Zhu, KZ   |  收藏  |  浏览/下载：16/0  |  提交时间：2019/04/09 Synthesis  Nitrogen-containing Polymer  Sulfur-containing Polymer  Conjugated Polymers  Hole-transporting Materials  Organic Light-emitting Diode Device  Leds   Nitrogen- and sulfur-containing conjugated polymers as the hole-transporting materials 期刊论文  OAI收割 SYNTHETIC METALS, 2001, 卷号: 119, 期号: 1-3, 页码: 329-330 作者:     |  收藏  |  浏览/下载：10/0  |  提交时间：2019/04/09 Nitrogen- And Sulfur-containing Polymer  Hole-transporting Material  Light-emitting Diode Device