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	Development of cold optical infrared imaging terminal with multiband 期刊论文 OAI收割 Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 9 作者: Huang, Zhiguo; Wang, Jianli; Yin, Limei; Li, Hongzhuang; Liu, Junchi \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2019/09/17 Thermography (imaging) Infrared detectors Low temperature effects Signal to noise ratio Space research Temperature
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.
	Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE) 会议论文 OAI收割 ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang X.; Wang X.; Wang X.; Zheng X.; Gao J. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 With reactive low voltage ion plating technique ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In2O3 and 10 wt.% SnO2 without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100 200 300 and 400C for 2 hours respectively. The effects of vacuum annealing on structural optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8-14m of the infrared atmosphere window and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition sheet resistance of ITO films had contrary changing trend with the IR reflectance as well.
	Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures 期刊论文 OAI收割 science in china series a-mathematics physics astronomy, 1997, 卷号: 40, 期号: 2, 页码: 214-218 Chen NF; He HJ; Wang YT; Lin LY 收藏 \| 浏览/下载：27/0 \| 提交时间：2010/11/17 low temperature molecular beam epitaxy GaAs single crystal lattice parameter arsenic interstitial couples arsenic precipitates effects of backgating or sidegating LAYERS DEPENDENCE